Abstract
Photoelectron holography is applied to Bi atoms adsorbed on Si(111) for a determination of the three-dimensional atomic structure. Instead of measuring the absolute intensity as a function of photon energy as is traditionally done, a differential measurement is carried out to yield the logarithmic derivative of the intensity. This leads to intensity self-normalization, and significantly improves the accuracy. The resulting images show a well-resolved trimer structure for the adsorption geometry.
| Original language | English |
|---|---|
| Pages (from-to) | L1143-L1147 |
| Journal | Surface Science |
| Volume | 417 |
| Issue number | 1 |
| DOIs | |
| State | Published - Nov 8 1998 |
| Externally published | Yes |
Funding
This work was supported by the US Department of Energy (Division of Materials Sciences, Office of Basic Energy Sciences) under Grant No. DEFG02-91ER45439. We acknowledge the use of central facilities of the Frederick Seitz Materials Research Laboratory, which is also supported by the same grant. The Synchrotron Radiation Center of the University of Wisconsin-Madison is supported by the US National Science Foundation Grant No. DMR-95-31009. An acknowledgment is also made to the Donors of the Petroleum Research Fund, administered by the American Chemical Society, and to the US National Science Foundation Grant Nos DMR-95-31582 and DMR-95-31809 for partial personnel and equipment support in connection with the synchrotron beamline operation.
| Funders | Funder number |
|---|---|
| US Department of Energy | |
| US National Science Foundation | |
| National Science Foundation | DMR-95-31582, DMR-95-31809 |
| American Chemical Society | |
| Basic Energy Sciences |
Keywords
- Adatoms
- Bismuth
- Photoelectron diffraction
- Silicon