Photoelectric Characteristics of Isotype Heterostructure p-WSe2/p-Si Photodetector with Improved Photoresponsivity and Detectivity

Ramu Singiri; Dong Won Shin; Beomsu Jo; Poornaprakash Bathalavaram; Moonsang Lee; Myung Gwan Hahm; Young Lae Kim

doi:10.1021/acsaelm.3c00521

Photoelectric Characteristics of Isotype Heterostructure p-WSe₂/p-Si Photodetector with Improved Photoresponsivity and Detectivity

Ramu Singiri, Dong Won Shin, Beomsu Jo, Poornaprakash Bathalavaram, Moonsang Lee, Myung Gwan Hahm, Young Lae Kim

Research output: Contribution to journal › Article › peer-review

Abstract

A heterojunction photodetector was fabricated for the first time via chemical vapor deposition by combining a p-type WSe₂ monolayered triangular flake with a p-type Si substrate. Under illumination, the p-p isotype heterojunction exhibited a broad photoresponse range of 400-1550 nm under LED and laser light. The introduction of monotriangular and atomic thick p-WSe₂ flakes onto p-type Si greatly increased the photodetection capability with a long carrier lifetime and robust light absorption. The best performance of this device exhibited a minimized dark current of 5 nA, a record high photocurrent-to-dark-current ratio of ∼28111.88, an ultrahigh detectivity of 2.075 × 10¹⁵ jones, a high external quantum efficiency (EQE) of 133132%, and a high responsivity of 568.6 A/W under light illumination of 532 nm with 9.17 mW/cm² intensity. These engrossing results indicate that this p-WSe₂/p-Si heterojunction device has considerable potential for applications in next-generation photodetectors.

Original language	English
Pages (from-to)	4778-4785
Number of pages	8
Journal	ACS Applied Electronic Materials
Volume	5
Issue number	9
DOIs	https://doi.org/10.1021/acsaelm.3c00521
State	Published - Sep 26 2023
Externally published	Yes

Funding

Y.L.K. acknowledges the financial support from the Purchase-linked Program (S3038568) funded by the Ministry of SMEs and Startups (MSS, Korea). This work was supported by a National Research Foundation of Korea (NRF) grant (Grant 2022M3H4A1A04076372) funded by the Korean government (MSIT, Ministry of Science and ICT).

Funders	Funder number
Ministry of Science, ICT and Future Planning
National Research Foundation of Korea	2022M3H4A1A04076372
Ministry of SMEs and Startups

Keywords

WSe
heterostructure
high photoresponsivity
isotype
photodetector

Access to Document

10.1021/acsaelm.3c00521

Cite this

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title = "Photoelectric Characteristics of Isotype Heterostructure p-WSe2/p-Si Photodetector with Improved Photoresponsivity and Detectivity",

abstract = "A heterojunction photodetector was fabricated for the first time via chemical vapor deposition by combining a p-type WSe2 monolayered triangular flake with a p-type Si substrate. Under illumination, the p-p isotype heterojunction exhibited a broad photoresponse range of 400-1550 nm under LED and laser light. The introduction of monotriangular and atomic thick p-WSe2 flakes onto p-type Si greatly increased the photodetection capability with a long carrier lifetime and robust light absorption. The best performance of this device exhibited a minimized dark current of 5 nA, a record high photocurrent-to-dark-current ratio of ∼28111.88, an ultrahigh detectivity of 2.075 × 1015 jones, a high external quantum efficiency (EQE) of 133132%, and a high responsivity of 568.6 A/W under light illumination of 532 nm with 9.17 mW/cm2 intensity. These engrossing results indicate that this p-WSe2/p-Si heterojunction device has considerable potential for applications in next-generation photodetectors.",

keywords = "WSe, heterostructure, high photoresponsivity, isotype, photodetector",

author = "Ramu Singiri and Shin, {Dong Won} and Beomsu Jo and Poornaprakash Bathalavaram and Moonsang Lee and Hahm, {Myung Gwan} and Kim, {Young Lae}",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

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doi = "10.1021/acsaelm.3c00521",

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AU - Singiri, Ramu

AU - Shin, Dong Won

AU - Jo, Beomsu

AU - Bathalavaram, Poornaprakash

AU - Lee, Moonsang

AU - Hahm, Myung Gwan

AU - Kim, Young Lae

PY - 2023/9/26

Y1 - 2023/9/26

N2 - A heterojunction photodetector was fabricated for the first time via chemical vapor deposition by combining a p-type WSe2 monolayered triangular flake with a p-type Si substrate. Under illumination, the p-p isotype heterojunction exhibited a broad photoresponse range of 400-1550 nm under LED and laser light. The introduction of monotriangular and atomic thick p-WSe2 flakes onto p-type Si greatly increased the photodetection capability with a long carrier lifetime and robust light absorption. The best performance of this device exhibited a minimized dark current of 5 nA, a record high photocurrent-to-dark-current ratio of ∼28111.88, an ultrahigh detectivity of 2.075 × 1015 jones, a high external quantum efficiency (EQE) of 133132%, and a high responsivity of 568.6 A/W under light illumination of 532 nm with 9.17 mW/cm2 intensity. These engrossing results indicate that this p-WSe2/p-Si heterojunction device has considerable potential for applications in next-generation photodetectors.

AB - A heterojunction photodetector was fabricated for the first time via chemical vapor deposition by combining a p-type WSe2 monolayered triangular flake with a p-type Si substrate. Under illumination, the p-p isotype heterojunction exhibited a broad photoresponse range of 400-1550 nm under LED and laser light. The introduction of monotriangular and atomic thick p-WSe2 flakes onto p-type Si greatly increased the photodetection capability with a long carrier lifetime and robust light absorption. The best performance of this device exhibited a minimized dark current of 5 nA, a record high photocurrent-to-dark-current ratio of ∼28111.88, an ultrahigh detectivity of 2.075 × 1015 jones, a high external quantum efficiency (EQE) of 133132%, and a high responsivity of 568.6 A/W under light illumination of 532 nm with 9.17 mW/cm2 intensity. These engrossing results indicate that this p-WSe2/p-Si heterojunction device has considerable potential for applications in next-generation photodetectors.

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