Photoconductive Effects in Single Crystals of BaZrS3

Boyang Zhao; Huandong Chen; Ragib Ahsan; Fei Hou; Eric R. Hoglund; Shantanu Singh; Maruda Shanmugasundaram; Huan Zhao; Andrey V. Krayev; Han Htoon; Patrick E. Hopkins; Jan Seidel; Rehan Kapadia; Jayakanth Ravichandran

doi:10.1021/acsphotonics.3c01563

Photoconductive Effects in Single Crystals of BaZrS₃

Boyang Zhao, Huandong Chen, Ragib Ahsan, Fei Hou, Eric R. Hoglund, Shantanu Singh, Maruda Shanmugasundaram, Huan Zhao, Andrey V. Krayev, Han Htoon, Patrick E. Hopkins, Jan Seidel, Rehan Kapadia, Jayakanth Ravichandran

Scanning Tunneling Microscopy Group

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Chalcogenide perovskites, such as BaZrS₃, are emerging semiconductors with the potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photoexcited carriers has not been experimentally investigated extensively. We studied the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS₃. We achieved Ohmic contacts to single crystals of BaZrS₃ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS₃ to remove the surface oxide leads to dense deformation grain boundaries and to trap-dominated photoconductive response. In comparison, Ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties.

Original language	English
Pages (from-to)	1109-1116
Number of pages	8
Journal	ACS Photonics
Volume	11
Issue number	3
DOIs	https://doi.org/10.1021/acsphotonics.3c01563
State	Published - Mar 20 2024

Funding

This work in part was funded by the Army Research Office (ARO) under award numbers W911NF-19\u20131\u20130137 and W911NF-21\u20131\u20130327 and by the US National Science Foundation with award number DMR-2122071. P.E.H. and E.R.H. are supported by the Office of Naval Research, Grant number N00014\u201323\u20131\u20132630 and National Science Foundation, Grant number CBET- 2318576. R.A. and R.K. were supported by the USC Provost Graduate Fellowship and National Science Foundation (NSF) under award number 2004791 respectively.

Keywords

Kelvin probe force microscopy
chalcogenide perovskite
defects
electron microscopy
optoelectronics
single crystals

Access to Document

10.1021/acsphotonics.3c01563

Cite this

@article{ea1ac7dd9c2f449ca17edff6089c596a,

title = "Photoconductive Effects in Single Crystals of BaZrS3",

abstract = "Chalcogenide perovskites, such as BaZrS3, are emerging semiconductors with the potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photoexcited carriers has not been experimentally investigated extensively. We studied the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS3. We achieved Ohmic contacts to single crystals of BaZrS3 and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS3 to remove the surface oxide leads to dense deformation grain boundaries and to trap-dominated photoconductive response. In comparison, Ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties.",

keywords = "Kelvin probe force microscopy, chalcogenide perovskite, defects, electron microscopy, optoelectronics, single crystals",

author = "Boyang Zhao and Huandong Chen and Ragib Ahsan and Fei Hou and Hoglund, {Eric R.} and Shantanu Singh and Maruda Shanmugasundaram and Huan Zhao and Krayev, {Andrey V.} and Han Htoon and Hopkins, {Patrick E.} and Jan Seidel and Rehan Kapadia and Jayakanth Ravichandran",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

year = "2024",

month = mar,

day = "20",

doi = "10.1021/acsphotonics.3c01563",

language = "English",

volume = "11",

pages = "1109--1116",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Photoconductive Effects in Single Crystals of BaZrS3

AU - Zhao, Boyang

AU - Chen, Huandong

AU - Ahsan, Ragib

AU - Hou, Fei

AU - Hoglund, Eric R.

AU - Singh, Shantanu

AU - Shanmugasundaram, Maruda

AU - Zhao, Huan

AU - Krayev, Andrey V.

AU - Htoon, Han

AU - Hopkins, Patrick E.

AU - Seidel, Jan

AU - Kapadia, Rehan

AU - Ravichandran, Jayakanth

PY - 2024/3/20

Y1 - 2024/3/20

N2 - Chalcogenide perovskites, such as BaZrS3, are emerging semiconductors with the potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photoexcited carriers has not been experimentally investigated extensively. We studied the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS3. We achieved Ohmic contacts to single crystals of BaZrS3 and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS3 to remove the surface oxide leads to dense deformation grain boundaries and to trap-dominated photoconductive response. In comparison, Ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties.

AB - Chalcogenide perovskites, such as BaZrS3, are emerging semiconductors with the potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photoexcited carriers has not been experimentally investigated extensively. We studied the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS3. We achieved Ohmic contacts to single crystals of BaZrS3 and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS3 to remove the surface oxide leads to dense deformation grain boundaries and to trap-dominated photoconductive response. In comparison, Ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties.

KW - Kelvin probe force microscopy

KW - chalcogenide perovskite

KW - defects

KW - electron microscopy

KW - optoelectronics

KW - single crystals

UR - http://www.scopus.com/inward/record.url?scp=85186099517&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.3c01563

DO - 10.1021/acsphotonics.3c01563

M3 - Article

AN - SCOPUS:85186099517

SN - 2330-4022

VL - 11

SP - 1109

EP - 1116

JO - ACS Photonics

JF - ACS Photonics

IS - 3

ER -