Abstract
Color centers in hexagonal boron nitride have shown enormous promise as single-photon sources, but a clear understanding of the electron-phonon interaction dynamics is critical to developing the material for quantum communications or quantum simulations. We demonstrate photon antibunching in the filtered auto- and cross-correlations glm(2)(τ) between zero-, one-, and two-phonon replicas of defect luminescence. With no background correction, we observe a single-photon purity of g(2)(0)=0.20 in a phonon replica and cross-spectral correlations of glm(2)(0)=0.18 between a phonon replica and the zero-phonon line. Moreover, we combine a violation of the Cauchy-Schwarz inequality and a phenomenological model of the phonon-mediated emission cross section to distinguish a low quantum-efficiency defect from phonon replicas of a bright defect.
| Original language | English |
|---|---|
| Article number | 020101 |
| Journal | Physical Review B |
| Volume | 99 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 9 2019 |
Funding
The authors acknowledge valuable input on the cross-section calculations from Rapheal Pooser and Harrison B. Prosper. This research was sponsored by the Laboratory-Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the U.S. Department of Energy. M.F. gratefully acknowledges support by the Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program. L.L. acknowledges support from the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Rapid thermal processing and spectroscopy experiments were carried out at the Center for Nanophase Materials Sciences (CNMS), which is sponsored at ORNL by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.