Abstract
We have determined the stability line in the 1/T-log[P(O2)] phase space for the synthesis of Nd1+xBa2-xCu3Oy (NdBCO) films. A systematic study of Tc, Jc, and ρ(T) dependence on oxygen partial pressure and temperature for the deposition of thin NdBCO films grown by pulsed-laser deposition was performed. The conditions for optimal NdBCO film growth were determined by varying oxygen partial pressure from 0.02 to 400 mTorr, and substrate temperature between 730 and 800 °C. The results show that the best NdBCO films are obtained at oxygen pressures in the range of 0.2-1.2 mTorr, depending on the substrate temperature. This is more than two orders-of-magnitude lower than the correspondent oxygen pressure appropriate for YBa2Cu3O7-δ film growth.
Original language | English |
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Pages (from-to) | 96-98 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 74 |
Issue number | 1 |
DOIs | |
State | Published - 1999 |