Phase stability for the in situ growth of Nd1+xBa2-xCu3Oy films using pulsed-laser deposition

C. Cantoni, D. P. Norton, D. M. Kroeger, M. Paranthaman, D. K. Christen, D. Verebelyi, R. Feenstra, D. F. Lee, E. D. Specht, V. Boffa, S. Pace

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Abstract

We have determined the stability line in the 1/T-log[P(O2)] phase space for the synthesis of Nd1+xBa2-xCu3Oy (NdBCO) films. A systematic study of Tc, Jc, and ρ(T) dependence on oxygen partial pressure and temperature for the deposition of thin NdBCO films grown by pulsed-laser deposition was performed. The conditions for optimal NdBCO film growth were determined by varying oxygen partial pressure from 0.02 to 400 mTorr, and substrate temperature between 730 and 800 °C. The results show that the best NdBCO films are obtained at oxygen pressures in the range of 0.2-1.2 mTorr, depending on the substrate temperature. This is more than two orders-of-magnitude lower than the correspondent oxygen pressure appropriate for YBa2Cu3O7-δ film growth.

Original languageEnglish
Pages (from-to)96-98
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number1
DOIs
StatePublished - 1999

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