Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering

O. M. Feroughi; C. Sternemann; Ch J. Sahle; M. A. Schroer; H. Sternemann; H. Conrad; A. Hohl; G. T. Seidler; J. Bradley; T. T. Fister; M. Balasubramanian; A. Sakko; K. Pirkkalainen; K. Hämäläinen; M. Tolan

doi:10.1063/1.3323106

Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering

O. M. Feroughi
, C. Sternemann
, Ch J. Sahle
, M. A. Schroer
, H. Sternemann
, H. Conrad
, A. Hohl
, G. T. Seidler
, J. Bradley
, T. T. Fister
, M. Balasubramanian
, A. Sakko
, K. Pirkkalainen
, K. Hämäläinen
, M. Tolan

Emerging and Solid-State Batteries

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We present an x-ray scattering study of the temperature-induced phase separation and Si nanocrystal formation in bulk amorphous SiO_x with x≈1. X-ray Raman scattering at the Si LII,III -edge reveals a significant contribution of suboxides present in native amorphous SiO. The suboxide contribution decreases with increasing annealing temperature between 800-1200 °C pointing toward a phase separation of SiO into Si and SiO₂ domains. In combination with x-ray diffraction and small angle x-ray scattering the SiO microstructure is found to be dominated by internal suboxide interfaces in the native state. For higher annealing temperatures above 900 °C growth of Si nanocrystals with rough surfaces embedded in a silicon oxide matrix can be observed.

Original language	English
Article number	081912
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3323106
State	Published - 2010

Funding

The authors would like to acknowledge APS and DELTA for providing synchrotron radiation. This work was supported by DAAD (Grant Nos. 313-PPP-SF/08-IK and 1127504), DFG (Grant No. TO 169/14-1) and the Academy of Finland (Grant Nos. 1110571 and 1127462).

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Feroughi, O. M., Sternemann, C., Sahle, C. J., Schroer, M. A., Sternemann, H., Conrad, H., Hohl, A., Seidler, G. T., Bradley, J., Fister, T. T., Balasubramanian, M., Sakko, A., Pirkkalainen, K., Hämäläinen, K., & Tolan, M. (2010). Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering. Applied Physics Letters, 96(8), Article 081912. https://doi.org/10.1063/1.3323106

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title = "Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering",

abstract = "We present an x-ray scattering study of the temperature-induced phase separation and Si nanocrystal formation in bulk amorphous SiOx with x≈1. X-ray Raman scattering at the Si LII,III -edge reveals a significant contribution of suboxides present in native amorphous SiO. The suboxide contribution decreases with increasing annealing temperature between 800-1200 °C pointing toward a phase separation of SiO into Si and SiO2 domains. In combination with x-ray diffraction and small angle x-ray scattering the SiO microstructure is found to be dominated by internal suboxide interfaces in the native state. For higher annealing temperatures above 900 °C growth of Si nanocrystals with rough surfaces embedded in a silicon oxide matrix can be observed.",

author = "Feroughi, \{O. M.\} and C. Sternemann and Sahle, \{Ch J.\} and Schroer, \{M. A.\} and H. Sternemann and H. Conrad and A. Hohl and Seidler, \{G. T.\} and J. Bradley and Fister, \{T. T.\} and M. Balasubramanian and A. Sakko and K. Pirkkalainen and K. H{\"a}m{\"a}l{\"a}inen and M. Tolan",

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Feroughi, OM, Sternemann, C, Sahle, CJ, Schroer, MA, Sternemann, H, Conrad, H, Hohl, A, Seidler, GT, Bradley, J, Fister, TT, Balasubramanian, M, Sakko, A, Pirkkalainen, K, Hämäläinen, K & Tolan, M 2010, 'Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering', Applied Physics Letters, vol. 96, no. 8, 081912. https://doi.org/10.1063/1.3323106

TY - JOUR

T1 - Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering

AU - Feroughi, O. M.

AU - Sternemann, C.

AU - Sahle, Ch J.

AU - Schroer, M. A.

AU - Sternemann, H.

AU - Conrad, H.

AU - Hohl, A.

AU - Seidler, G. T.

AU - Bradley, J.

AU - Fister, T. T.

AU - Balasubramanian, M.

AU - Sakko, A.

AU - Pirkkalainen, K.

AU - Hämäläinen, K.

AU - Tolan, M.

PY - 2010

Y1 - 2010

N2 - We present an x-ray scattering study of the temperature-induced phase separation and Si nanocrystal formation in bulk amorphous SiOx with x≈1. X-ray Raman scattering at the Si LII,III -edge reveals a significant contribution of suboxides present in native amorphous SiO. The suboxide contribution decreases with increasing annealing temperature between 800-1200 °C pointing toward a phase separation of SiO into Si and SiO2 domains. In combination with x-ray diffraction and small angle x-ray scattering the SiO microstructure is found to be dominated by internal suboxide interfaces in the native state. For higher annealing temperatures above 900 °C growth of Si nanocrystals with rough surfaces embedded in a silicon oxide matrix can be observed.

AB - We present an x-ray scattering study of the temperature-induced phase separation and Si nanocrystal formation in bulk amorphous SiOx with x≈1. X-ray Raman scattering at the Si LII,III -edge reveals a significant contribution of suboxides present in native amorphous SiO. The suboxide contribution decreases with increasing annealing temperature between 800-1200 °C pointing toward a phase separation of SiO into Si and SiO2 domains. In combination with x-ray diffraction and small angle x-ray scattering the SiO microstructure is found to be dominated by internal suboxide interfaces in the native state. For higher annealing temperatures above 900 °C growth of Si nanocrystals with rough surfaces embedded in a silicon oxide matrix can be observed.

UR - https://www.scopus.com/pages/publications/77749239717

U2 - 10.1063/1.3323106

DO - 10.1063/1.3323106

M3 - Article

AN - SCOPUS:77749239717

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081912

ER -

Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering

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