TY - GEN
T1 - PFM2
T2 - 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
AU - Ratti, L.
AU - Comotti, D.
AU - Fabris, L.
AU - Grassi, M.
AU - Lodola, L.
AU - Malcovati, P.
AU - Manghisoni, M.
AU - Re, V.
AU - Traversi, G.
AU - Vacchi, C.
AU - Batignani, G.
AU - Bettarini, S.
AU - Casarosa, G.
AU - Forti, F.
AU - Morsani, F.
AU - Paladino, A.
AU - Paoloni, E.
AU - Rizzo, G.
AU - Benkechkache, M. A.
AU - Dalla Betta, G. F.
AU - Mendicino, R.
AU - Pancheri, L.
AU - Verzellesi, G.
AU - Xu, H.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/10/16
Y1 - 2017/10/16
N2 - A readout chip, consisting of 32×32 square cells, has been designed in a 65 nm CMOS technology. The circuit will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager, envisaged for applications to experiments at the next generation X-ray FELs. The pixel pitch is 110 μm, for a total area of about 16 mm2. Different solutions for the readout channel, which includes a charge preamplifier, a time-variant filter and a 10 bit ADC, have been integrated in the chip. In particular, a couple of different versions for the time-variant processor have been implemented. The charge preamplifier is provided with four different gain settings, therefore improving the system capability to comply with photon energies in the 1 keV to 10 keV interval. This work, besides discussing in detail the readout channel and array architecture, will present the first results from the chip characterization.
AB - A readout chip, consisting of 32×32 square cells, has been designed in a 65 nm CMOS technology. The circuit will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager, envisaged for applications to experiments at the next generation X-ray FELs. The pixel pitch is 110 μm, for a total area of about 16 mm2. Different solutions for the readout channel, which includes a charge preamplifier, a time-variant filter and a 10 bit ADC, have been integrated in the chip. In particular, a couple of different versions for the time-variant processor have been implemented. The charge preamplifier is provided with four different gain settings, therefore improving the system capability to comply with photon energies in the 1 keV to 10 keV interval. This work, besides discussing in detail the readout channel and array architecture, will present the first results from the chip characterization.
UR - http://www.scopus.com/inward/record.url?scp=85041698758&partnerID=8YFLogxK
U2 - 10.1109/NSSMIC.2016.8069724
DO - 10.1109/NSSMIC.2016.8069724
M3 - Conference contribution
AN - SCOPUS:85041698758
T3 - 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
BT - 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 29 October 2016 through 6 November 2016
ER -