Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Joseph Casamento; Steven M. Baksa; Drew Behrendt; Sebastian Calderon; Devin Goodling; John Hayden; Fan He; Leonard Jacques; Seung Hoon Lee; Walter Smith; Albert Suceava; Quyen Tran; Xiaojun Zheng; Rui Zu; Thomas Beechem; Ismaila Dabo; Elizabeth C. Dickey; Giovanni Esteves; Venkatraman Gopalan; Michael David Henry; Jon F. Ihlefeld; Thomas N. Jackson; Sergei V. Kalinin; Kyle P. Kelley; Yongtao Liu; Andrew M. Rappe; Joan Redwing; Susan Trolier-McKinstry; Jon Paul Maria

doi:10.1063/5.0185066

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Joseph Casamento, Steven M. Baksa, Drew Behrendt, Sebastian Calderon, Devin Goodling, John Hayden, Fan He, Leonard Jacques, Seung Hoon Lee, Walter Smith, Albert Suceava, Quyen Tran, Xiaojun Zheng, Rui Zu, Thomas Beechem, Ismaila Dabo, Elizabeth C. Dickey, Giovanni Esteves, Venkatraman Gopalan, Michael David HenryJon F. Ihlefeld, Thomas N. Jackson, Sergei V. Kalinin, Kyle P. Kelley, Yongtao Liu, Andrew M. Rappe, Joan Redwing, Susan Trolier-McKinstry, Jon Paul Maria

Research output: Contribution to journal › Short survey › peer-review

6 Scopus citations

Abstract

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ∼135 μC/cm² charge in Al_1−xB_xN via electron microscopy, Al_1−xB_xN ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn_1−xMg_xO. The main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

Original language	English
Article number	080501
Journal	Applied Physics Letters
Volume	124
Issue number	8
DOIs	https://doi.org/10.1063/5.0185066
State	Published - Feb 19 2024

Funding

The authors would like to acknowledge support from the defense advanced research projects agency (DARPA) tunable ferroelectric nitrides (TUFEN) program under the supervision of Dr. Ronald Polcawich and Dr. Ali Keshavarzi (Grant Nos. W911NF-20-2-0274 and HR0011-20-9-0047). The data presented in , , , , , , , , and are based upon work supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers program under Award No. DE-SC0021118. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.

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Casamento, J., Baksa, S. M., Behrendt, D., Calderon, S., Goodling, D., Hayden, J., He, F., Jacques, L., Lee, S. H., Smith, W., Suceava, A., Tran, Q., Zheng, X., Zu, R., Beechem, T., Dabo, I., Dickey, E. C., Esteves, G., Gopalan, V., ... Maria, J. P. (2024). Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications. Applied Physics Letters, 124(8), Article 080501. https://doi.org/10.1063/5.0185066

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title = "Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications",

abstract = "Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ∼135 μC/cm2 charge in Al1−xBxN via electron microscopy, Al1−xBxN ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn1−xMgxO. The main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.",

author = "Joseph Casamento and Baksa, {Steven M.} and Drew Behrendt and Sebastian Calderon and Devin Goodling and John Hayden and Fan He and Leonard Jacques and Lee, {Seung Hoon} and Walter Smith and Albert Suceava and Quyen Tran and Xiaojun Zheng and Rui Zu and Thomas Beechem and Ismaila Dabo and Dickey, {Elizabeth C.} and Giovanni Esteves and Venkatraman Gopalan and Henry, {Michael David} and Ihlefeld, {Jon F.} and Jackson, {Thomas N.} and Kalinin, {Sergei V.} and Kelley, {Kyle P.} and Yongtao Liu and Rappe, {Andrew M.} and Joan Redwing and Susan Trolier-McKinstry and Maria, {Jon Paul}",

note = "Publisher Copyright: {\textcopyright} 2024 Author(s).",

year = "2024",

month = feb,

day = "19",

doi = "10.1063/5.0185066",

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Casamento, J, Baksa, SM, Behrendt, D, Calderon, S, Goodling, D, Hayden, J, He, F, Jacques, L, Lee, SH, Smith, W, Suceava, A, Tran, Q, Zheng, X, Zu, R, Beechem, T, Dabo, I, Dickey, EC, Esteves, G, Gopalan, V, Henry, MD, Ihlefeld, JF, Jackson, TN, Kalinin, SV, Kelley, KP , Liu, Y, Rappe, AM, Redwing, J, Trolier-McKinstry, S & Maria, JP 2024, 'Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications', Applied Physics Letters, vol. 124, no. 8, 080501. https://doi.org/10.1063/5.0185066

TY - JOUR

T1 - Perspectives and progress on wurtzite ferroelectrics

T2 - Synthesis, characterization, theory, and device applications

AU - Casamento, Joseph

AU - Baksa, Steven M.

AU - Behrendt, Drew

AU - Calderon, Sebastian

AU - Goodling, Devin

AU - Hayden, John

AU - He, Fan

AU - Jacques, Leonard

AU - Lee, Seung Hoon

AU - Smith, Walter

AU - Suceava, Albert

AU - Tran, Quyen

AU - Zheng, Xiaojun

AU - Zu, Rui

AU - Beechem, Thomas

AU - Dabo, Ismaila

AU - Dickey, Elizabeth C.

AU - Esteves, Giovanni

AU - Gopalan, Venkatraman

AU - Henry, Michael David

AU - Ihlefeld, Jon F.

AU - Jackson, Thomas N.

AU - Kalinin, Sergei V.

AU - Kelley, Kyle P.

AU - Liu, Yongtao

AU - Rappe, Andrew M.

AU - Redwing, Joan

AU - Trolier-McKinstry, Susan

AU - Maria, Jon Paul

PY - 2024/2/19

Y1 - 2024/2/19

N2 - Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ∼135 μC/cm2 charge in Al1−xBxN via electron microscopy, Al1−xBxN ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn1−xMgxO. The main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

AB - Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ∼135 μC/cm2 charge in Al1−xBxN via electron microscopy, Al1−xBxN ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn1−xMgxO. The main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

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U2 - 10.1063/5.0185066

DO - 10.1063/5.0185066

M3 - Short survey

AN - SCOPUS:85185887515

SN - 0003-6951

VL - 124

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 080501

ER -

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

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