Abstract
Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices.
Original language | English |
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Article number | 59220K |
Pages (from-to) | 1-12 |
Number of pages | 12 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5922 |
DOIs | |
State | Published - 2005 |
Event | Hard X-Ray and Gamma-Ray Detector Physics VII - San Diego, CA, United States Duration: Aug 1 2005 → Aug 3 2005 |
Keywords
- CdZnTe
- Gamma ray detectors
- Pulse-shape analysis