Performance of SiC Schottky diodes

Veda Prakash Galigekere; Marian K. Kazimierczuk

doi:10.1109/MWSCAS.2007.4488671

Performance of SiC Schottky diodes

Veda Prakash Galigekere, Marian K. Kazimierczuk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Performance of Silicon Carbide (SiC) Schottky diodes driven by large-signal square wave voltage is evaluated. The voltage equations for the turn-on and turn-off transitions of the diode are derived assuming a linear junction capacitance, C_J. The turn-on and turn-off transition voltage waveforms are verified practically for a square wave pulsating between positive 10 V and negative 10 V. The diode current waveforms for 100 kHz, 1 MHz, 2 MHz and 3 MHz are analyzed and presented. For the experiment, CSD10060, 600 V, 10 A Cree SiC Schottky diode is used. The theoretical and experimental results were in good agreement. PSPICE simulation results comparing the performance of CSD10060, MUR1560, 600 V, 10 A ultra fast recovery Silicon (Si) junction diode and MSR860, 600 V, 8 A soft recovery Si junction diode is presented.

Original language	English
Title of host publication	2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference Proceedings
Pages	682-685
Number of pages	4
DOIs	https://doi.org/10.1109/MWSCAS.2007.4488671
State	Published - 2007
Externally published	Yes
Event	2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference - Montreal, QC, Canada Duration: Aug 5 2007 → Aug 8 2007

Publication series

Name	Midwest Symposium on Circuits and Systems
ISSN (Print)	1548-3746

Conference

Conference	2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference
Country/Territory	Canada
City	Montreal, QC
Period	08/5/07 → 08/8/07

Access to Document

10.1109/MWSCAS.2007.4488671

Cite this

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title = "Performance of SiC Schottky diodes",

abstract = "Performance of Silicon Carbide (SiC) Schottky diodes driven by large-signal square wave voltage is evaluated. The voltage equations for the turn-on and turn-off transitions of the diode are derived assuming a linear junction capacitance, CJ. The turn-on and turn-off transition voltage waveforms are verified practically for a square wave pulsating between positive 10 V and negative 10 V. The diode current waveforms for 100 kHz, 1 MHz, 2 MHz and 3 MHz are analyzed and presented. For the experiment, CSD10060, 600 V, 10 A Cree SiC Schottky diode is used. The theoretical and experimental results were in good agreement. PSPICE simulation results comparing the performance of CSD10060, MUR1560, 600 V, 10 A ultra fast recovery Silicon (Si) junction diode and MSR860, 600 V, 8 A soft recovery Si junction diode is presented.",

author = "Galigekere, {Veda Prakash} and Kazimierczuk, {Marian K.}",

year = "2007",

doi = "10.1109/MWSCAS.2007.4488671",

language = "English",

isbn = "1424411769",

series = "Midwest Symposium on Circuits and Systems",

pages = "682--685",

booktitle = "2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference Proceedings",

note = "2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference ; Conference date: 05-08-2007 Through 08-08-2007",

}

Galigekere, VP & Kazimierczuk, MK 2007, Performance of SiC Schottky diodes. in 2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference Proceedings., 4488671, Midwest Symposium on Circuits and Systems, pp. 682-685, 2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference, Montreal, QC, Canada, 08/5/07. https://doi.org/10.1109/MWSCAS.2007.4488671

TY - GEN

T1 - Performance of SiC Schottky diodes

AU - Galigekere, Veda Prakash

AU - Kazimierczuk, Marian K.

PY - 2007

Y1 - 2007

N2 - Performance of Silicon Carbide (SiC) Schottky diodes driven by large-signal square wave voltage is evaluated. The voltage equations for the turn-on and turn-off transitions of the diode are derived assuming a linear junction capacitance, CJ. The turn-on and turn-off transition voltage waveforms are verified practically for a square wave pulsating between positive 10 V and negative 10 V. The diode current waveforms for 100 kHz, 1 MHz, 2 MHz and 3 MHz are analyzed and presented. For the experiment, CSD10060, 600 V, 10 A Cree SiC Schottky diode is used. The theoretical and experimental results were in good agreement. PSPICE simulation results comparing the performance of CSD10060, MUR1560, 600 V, 10 A ultra fast recovery Silicon (Si) junction diode and MSR860, 600 V, 8 A soft recovery Si junction diode is presented.

AB - Performance of Silicon Carbide (SiC) Schottky diodes driven by large-signal square wave voltage is evaluated. The voltage equations for the turn-on and turn-off transitions of the diode are derived assuming a linear junction capacitance, CJ. The turn-on and turn-off transition voltage waveforms are verified practically for a square wave pulsating between positive 10 V and negative 10 V. The diode current waveforms for 100 kHz, 1 MHz, 2 MHz and 3 MHz are analyzed and presented. For the experiment, CSD10060, 600 V, 10 A Cree SiC Schottky diode is used. The theoretical and experimental results were in good agreement. PSPICE simulation results comparing the performance of CSD10060, MUR1560, 600 V, 10 A ultra fast recovery Silicon (Si) junction diode and MSR860, 600 V, 8 A soft recovery Si junction diode is presented.

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U2 - 10.1109/MWSCAS.2007.4488671

DO - 10.1109/MWSCAS.2007.4488671

M3 - Conference contribution

AN - SCOPUS:51449083367

SN - 1424411769

SN - 9781424411764

T3 - Midwest Symposium on Circuits and Systems

SP - 682

EP - 685

BT - 2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference Proceedings

T2 - 2007 50th Midwest Symposium on Circuits and Systems, MWSCAS - Conference

Y2 - 5 August 2007 through 8 August 2007

ER -

Performance of SiC Schottky diodes

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