Abstract
The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional crystalline semiconductors as building blocks in next-generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate an approach for the formation of lithographically patterned arrays of lateral semiconducting heterojunctions within a single two-dimensional crystal. Electron beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS 2 using pulsed laser vaporization of sulfur to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are studied by Raman and photoluminescence spectroscopy, atomically resolved scanning transmission electron microscopy and device characterization. This demonstration of lateral heterojunction arrays within a monolayer crystal is an essential step for the integration of two-dimensional semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin devices.
| Original language | English |
|---|---|
| Article number | 7749 |
| Journal | Nature Communications |
| Volume | 6 |
| DOIs | |
| State | Published - Jul 22 2015 |
Funding
Synthesis science including crystal growth, in situ plume diagnostics, TEM analysis, SEM and AFM studies and conversion technique development (M.M.-S., K.W., J.L., A.R.L., K.X., D.B.G., C.M.R., A.A.P. and M.Y.) was supported by the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division and performed in part as a user project at the Center for Nanophase Materials Sciences, which is a DOE Office of the Science User Facility. Characterization science at Center for Nanophase Materials Sciences (CNMS) including optical characterization and lithography techniques (M.-W.L., A.B. and I.N.I.) was supported by the Scientific User Facilities Division. L.B. was supported by the National Secretariat of Higher Education, Science, Technology and Innovation of Ecuador (SENESCYT).