Abstract
Using the vertical Bridgman process, a single semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. In addition to the main Bridgman heater, a submerged heater is added that separates the melt into two zones, i.e., an upper melt and a lower melt that is continuously replenished with fluid from the upper melt to offset the rejection of species along the crystal-melt interface. As crystal growth progresses, the crucible is slowly lowered to maintain a constant lower melt depth. An externally applied rotating magnetic field produced by a synchronous motor stator is used to control the transport of the electrically conducting molten semiconductor. This paper treats the flow of a molten semiconductor and the dopant transport during the vertical Bridgman process with a submerged heater and with a transverse rotating magnetic field. This paper also investigates the effects of the crystal radius, the melt depth, the strength of the magnetic field, and the number of poles in the inductor on the dopant distributions in the crystal.
| Original language | English |
|---|---|
| Pages (from-to) | 384-388 |
| Number of pages | 5 |
| Journal | Journal of Thermophysics and Heat Transfer |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2006 |
| Externally published | Yes |
Funding
This research was supported by the U. S. Air Force Office of Scientific Research under Grant FA9550-04-1-0249. The calcu- lations were performed on the Cray X1 provided by the DoD High Performance Computing Modernization Program under Grant AFSNH2487 and on the IBM pSeries 690 provided by the National Computational Science Alliance under Grant DMR030015.