Parametric study of AlAs/GaAs superlattice double-barrier diodes

M. J. Paulus; C. A. Bozada; C. I. Huang; S. C. Dudley; K. R. Evans; C. E. Stutz; R. L. Jones; M. E. Cheney

doi:10.1063/1.100132

Parametric study of AlAs/GaAs superlattice double-barrier diodes

M. J. Paulus, C. A. Bozada, C. I. Huang, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones, M. E. Cheney

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Abstract

Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.

Original language	English
Pages (from-to)	207-209
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	3
DOIs	https://doi.org/10.1063/1.100132
State	Published - 1988
Externally published	Yes

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@article{115096cbe2cf4ac19354d4d9b5365a87,

title = "Parametric study of AlAs/GaAs superlattice double-barrier diodes",

abstract = "Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.",

author = "Paulus, {M. J.} and Bozada, {C. A.} and Huang, {C. I.} and Dudley, {S. C.} and Evans, {K. R.} and Stutz, {C. E.} and Jones, {R. L.} and Cheney, {M. E.}",

year = "1988",

doi = "10.1063/1.100132",

language = "English",

volume = "53",

pages = "207--209",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Parametric study of AlAs/GaAs superlattice double-barrier diodes

AU - Paulus, M. J.

AU - Bozada, C. A.

AU - Huang, C. I.

AU - Dudley, S. C.

AU - Evans, K. R.

AU - Stutz, C. E.

AU - Jones, R. L.

AU - Cheney, M. E.

PY - 1988

Y1 - 1988

N2 - Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.

AB - Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.

UR - http://www.scopus.com/inward/record.url?scp=5544267610&partnerID=8YFLogxK

U2 - 10.1063/1.100132

DO - 10.1063/1.100132

M3 - Article

AN - SCOPUS:5544267610

SN - 0003-6951

VL - 53

SP - 207

EP - 209

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Parametric study of AlAs/GaAs superlattice double-barrier diodes

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