@inproceedings{771ce83d61f347d3958afdb0aec70808,
title = "Packaging of silicon carbide power semiconductor devices",
abstract = "The packaging of silicon carbide (SiC) power semiconductor devices was investigated. SiC dice were attached to a direct bond copper substrate using Sn96.5-Ag3.5 solder. Using a transient liquid bonding technique, SiC dice were brazed to the silicon nitride substrate with Ag74.2-In25.8 and Au76-In24 solders. No degradation of these solder joints were noted after thermal storage at 400°C for 100 hours.",
keywords = "High-temperature die attach, Power semiconductor packaging, Silicon carbide, Silicon nitride substrate, Transient liquid phase bonding",
author = "Ang, {Simon S.} and Brown, {William D.} and Habib Mustain and Brian Rowden and Balda, {Juan C.} and Alan Mantooth",
year = "2008",
language = "English",
isbn = "9789881740816",
series = "Proceedings - Electrochemical Society",
pages = "604--609",
booktitle = "Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology",
note = "7th International Conference on Semiconductor Technology, ISTC 2008 ; Conference date: 15-03-2008 Through 17-03-2008",
}