Packaging of high-temperature power semiconductor modules

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4 Scopus citations

Abstract

The requirements of higher operating temperatures for power semiconductor modules require substantial changes to conventional power module fabrication techniques. This paper discusses the selection of substrates, die attachment methods, assembly and package housing for high-temperature power module. A transient liquid phase die attachment method has been demonstrated using two binary alloy systems of Ag-Sn and Ag-In. High-temperature power modules have been fabricated to illustrate the feasibility of the proposed fabrication methods.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
PublisherElectrochemical Society Inc.
Pages909-914
Number of pages6
Edition1
ISBN (Electronic)9781607681564
ISBN (Print)9781607682639
DOIs
StatePublished - 2010
Externally publishedYes
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: Mar 18 2010Mar 19 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2010, CSTIC 2010
Country/TerritoryChina
CityShanghai
Period03/18/1003/19/10

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