Packaging issues for high-voltage power electronic modules

S. S. Ang, T. Evans, J. Zhou, K. Schirmer, H. Zhang, B. Rowden, J. C. Balda, H. A. Mantooth

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

This paper addresses interconnect and passivation issues associated with the fabrication of high-voltage power electronic modules. A wire-bondless direct solder attachment hierarchy for interconnection was evaluated using two direct-bond copper (DBC) elements: one acting as a substrate connected to a base plate and the second as an interconnection lead-frame between the power semiconductor devices. Finite element modeling revealed their enhanced performance over wire-bonded modules due to at least an order of magnitude decrease in parasitic inductance and the added benefit of enhanced thermal performance. A two-step passivationZencapsulation method to provide higher breakdown voltages at high temperatures is proposed for future high-voltage power electronic modules.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages893-898
Number of pages6
Edition1
DOIs
StatePublished - 2011
Externally publishedYes
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: Mar 13 2011Mar 14 2011

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th China Semiconductor Technology International Conference 2011, CSTIC 2011
Country/TerritoryChina
CityShanghai
Period03/13/1103/14/11

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