Packaging-induced strain measurement based on the degree of polarization in GaAsP-GaInP high-power diode laser bars

Ye Wang; Li Qin; Yan Zhang; Zhenhua Tian; Ye Yang; Zaijin Li; Chao Wang; Di Yao; Honghe Yin; Yun Liu; Lijun Wang

doi:10.1109/LPT.2009.2021148

Packaging-induced strain measurement based on the degree of polarization in GaAsP-GaInP high-power diode laser bars

Ye Wang, Li Qin, Yan Zhang, Zhenhua Tian, Ye Yang, Zaijin Li, Chao Wang, Di Yao, Honghe Yin, Yun Liu, Lijun Wang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced.

Original language	English
Pages (from-to)	963-965
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	14
DOIs	https://doi.org/10.1109/LPT.2009.2021148
State	Published - Jul 15 2009

Keywords

Laser modes
Semiconductor device packaging
Semiconductor laser arrays
Strain measurement

Access to Document

10.1109/LPT.2009.2021148

Cite this

@article{32e64120a0044323853a5548efb2979f,

title = "Packaging-induced strain measurement based on the degree of polarization in GaAsP-GaInP high-power diode laser bars",

abstract = "The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced.",

keywords = "Laser modes, Semiconductor device packaging, Semiconductor laser arrays, Strain measurement",

author = "Ye Wang and Li Qin and Yan Zhang and Zhenhua Tian and Ye Yang and Zaijin Li and Chao Wang and Di Yao and Honghe Yin and Yun Liu and Lijun Wang",

year = "2009",

month = jul,

day = "15",

doi = "10.1109/LPT.2009.2021148",

language = "English",

volume = "21",

pages = "963--965",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "14",

}

TY - JOUR

T1 - Packaging-induced strain measurement based on the degree of polarization in GaAsP-GaInP high-power diode laser bars

AU - Wang, Ye

AU - Qin, Li

AU - Zhang, Yan

AU - Tian, Zhenhua

AU - Yang, Ye

AU - Li, Zaijin

AU - Wang, Chao

AU - Yao, Di

AU - Yin, Honghe

AU - Liu, Yun

AU - Wang, Lijun

PY - 2009/7/15

Y1 - 2009/7/15

N2 - The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced.

AB - The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced.

KW - Laser modes

KW - Semiconductor device packaging

KW - Semiconductor laser arrays

KW - Strain measurement

UR - http://www.scopus.com/inward/record.url?scp=67650678669&partnerID=8YFLogxK

U2 - 10.1109/LPT.2009.2021148

DO - 10.1109/LPT.2009.2021148

M3 - Article

AN - SCOPUS:67650678669

SN - 1041-1135

VL - 21

SP - 963

EP - 965

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 14

ER -

Packaging-induced strain measurement based on the degree of polarization in GaAsP-GaInP high-power diode laser bars

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this