Packaging and modeling of SiC power modules

Kit Schirmer; Brian Rowden; H. Alan Mantooth; Simon S. Ang; Juan C. Balda

doi:10.1149/1.3631496

Packaging and modeling of SiC power modules

Kit Schirmer, Brian Rowden, H. Alan Mantooth, Simon S. Ang, Juan C. Balda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

This paper presents the latest advancements in silicon carbide (SiC) power module packaging. Die attach methods, passivation techniques, and module packaging techniques for multiple-chip power modules are described. The most recent work involving high voltage/high current modules for a SiC fault current limiter rated at 8 kV and 400 A continuous current is described. A roadmap to address outstanding challenges is proposed.

Original language	English
Title of host publication	Gallium Nitride and Silicon Carbide Power Technologies
Publisher	Electrochemical Society Inc.
Pages	183-188
Number of pages	6
Edition	8
ISBN (Electronic)	9781607682622
ISBN (Print)	9781566779081
DOIs	https://doi.org/10.1149/1.3631496
State	Published - 2011
Externally published	Yes
Event	Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	8
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

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10.1149/1.3631496

Cite this

@inproceedings{15bb360e6e734a278edeac05275468b5,

title = "Packaging and modeling of SiC power modules",

abstract = "This paper presents the latest advancements in silicon carbide (SiC) power module packaging. Die attach methods, passivation techniques, and module packaging techniques for multiple-chip power modules are described. The most recent work involving high voltage/high current modules for a SiC fault current limiter rated at 8 kV and 400 A continuous current is described. A roadmap to address outstanding challenges is proposed.",

author = "Kit Schirmer and Brian Rowden and Mantooth, {H. Alan} and Ang, {Simon S.} and Balda, {Juan C.}",

year = "2011",

doi = "10.1149/1.3631496",

language = "English",

isbn = "9781566779081",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "8",

pages = "183--188",

booktitle = "Gallium Nitride and Silicon Carbide Power Technologies",

edition = "8",

note = "Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Schirmer, K, Rowden, B, Mantooth, HA, Ang, SS & Balda, JC 2011, Packaging and modeling of SiC power modules. in Gallium Nitride and Silicon Carbide Power Technologies. 8 edn, ECS Transactions, no. 8, vol. 41, Electrochemical Society Inc., pp. 183-188, Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3631496

TY - GEN

T1 - Packaging and modeling of SiC power modules

AU - Schirmer, Kit

AU - Rowden, Brian

AU - Mantooth, H. Alan

AU - Ang, Simon S.

AU - Balda, Juan C.

PY - 2011

Y1 - 2011

N2 - This paper presents the latest advancements in silicon carbide (SiC) power module packaging. Die attach methods, passivation techniques, and module packaging techniques for multiple-chip power modules are described. The most recent work involving high voltage/high current modules for a SiC fault current limiter rated at 8 kV and 400 A continuous current is described. A roadmap to address outstanding challenges is proposed.

AB - This paper presents the latest advancements in silicon carbide (SiC) power module packaging. Die attach methods, passivation techniques, and module packaging techniques for multiple-chip power modules are described. The most recent work involving high voltage/high current modules for a SiC fault current limiter rated at 8 kV and 400 A continuous current is described. A roadmap to address outstanding challenges is proposed.

UR - http://www.scopus.com/inward/record.url?scp=84857263198&partnerID=8YFLogxK

U2 - 10.1149/1.3631496

DO - 10.1149/1.3631496

M3 - Conference contribution

AN - SCOPUS:84857263198

SN - 9781566779081

T3 - ECS Transactions

SP - 183

EP - 188

BT - Gallium Nitride and Silicon Carbide Power Technologies

PB - Electrochemical Society Inc.

T2 - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Packaging and modeling of SiC power modules

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