p-type ZnSe: N grown by molecular beam epitaxy: evidence of non-radiative recombination centers in moderately to heavily doped material

L. C. Calhoun; C. M. Rouleau; M. H. Jeon; R. M. Park

doi:10.1016/0022-0248(94)90832-X

p-type ZnSe: N grown by molecular beam epitaxy: evidence of non-radiative recombination centers in moderately to heavily doped material

L. C. Calhoun, C. M. Rouleau, M. H. Jeon, R. M. Park

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Abstract

We present data in this paper which demonstrate that the luminescence efficiency of p-type ZnSe : N grown by molecular beam epitaxy using a remote RF plasma source is a strong function of doping concentration and that in moderately to heavily doped material (corresponding to N_A - N_D ≥ 2 × 10¹⁷ cm^-3) significant concentrations of non-radiative recombination centers strongly limit the luminescence efficiency of the material. Such data were obtained by performing real-time, in situ cathodoluminescence intensity measurements during epilayer growth for variously doped epilayers.

Original language	English
Pages (from-to)	352-356
Number of pages	5
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90832-X
State	Published - Apr 2 1994
Externally published	Yes

Funding

The authors wish to thank Dr. James DePuydt and Mr. Gregory Meis-Haugen of the 3M Co. (St. Paul, MN) for providing the C-V data. The research has been financially supported by the National Science Foundation (Grant No. DMR-9116880) and by the Advanced Research Projects Agency (University Research Initiative Grant No. N-00014-92-J-1895).

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10.1016/0022-0248(94)90832-X

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title = "p-type ZnSe: N grown by molecular beam epitaxy: evidence of non-radiative recombination centers in moderately to heavily doped material",

abstract = "We present data in this paper which demonstrate that the luminescence efficiency of p-type ZnSe : N grown by molecular beam epitaxy using a remote RF plasma source is a strong function of doping concentration and that in moderately to heavily doped material (corresponding to NA - ND ≥ 2 × 1017 cm-3) significant concentrations of non-radiative recombination centers strongly limit the luminescence efficiency of the material. Such data were obtained by performing real-time, in situ cathodoluminescence intensity measurements during epilayer growth for variously doped epilayers.",

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T2 - N grown by molecular beam epitaxy: evidence of non-radiative recombination centers in moderately to heavily doped material

AU - Calhoun, L. C.

AU - Rouleau, C. M.

AU - Jeon, M. H.

AU - Park, R. M.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - We present data in this paper which demonstrate that the luminescence efficiency of p-type ZnSe : N grown by molecular beam epitaxy using a remote RF plasma source is a strong function of doping concentration and that in moderately to heavily doped material (corresponding to NA - ND ≥ 2 × 1017 cm-3) significant concentrations of non-radiative recombination centers strongly limit the luminescence efficiency of the material. Such data were obtained by performing real-time, in situ cathodoluminescence intensity measurements during epilayer growth for variously doped epilayers.

AB - We present data in this paper which demonstrate that the luminescence efficiency of p-type ZnSe : N grown by molecular beam epitaxy using a remote RF plasma source is a strong function of doping concentration and that in moderately to heavily doped material (corresponding to NA - ND ≥ 2 × 1017 cm-3) significant concentrations of non-radiative recombination centers strongly limit the luminescence efficiency of the material. Such data were obtained by performing real-time, in situ cathodoluminescence intensity measurements during epilayer growth for variously doped epilayers.

UR - https://www.scopus.com/pages/publications/0028760514

U2 - 10.1016/0022-0248(94)90832-X

DO - 10.1016/0022-0248(94)90832-X

M3 - Article

AN - SCOPUS:0028760514

SN - 0022-0248

VL - 138

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EP - 356

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

p-type ZnSe: N grown by molecular beam epitaxy: evidence of non-radiative recombination centers in moderately to heavily doped material

Abstract

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