p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

R. M. Park; M. B. Troffer; C. M. Rouleau; J. M. DePuydt; M. A. Haase

doi:10.1063/1.103919

p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

R. M. Park, M. B. Troffer, C. M. Rouleau, J. M. DePuydt, M. A. Haase

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Abstract

A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×10¹⁷ cm ^-3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.

Original language	English
Pages (from-to)	2127-2129
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	20
DOIs	https://doi.org/10.1063/1.103919
State	Published - 1990
Externally published	Yes

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title = "p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth",

abstract = "A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm -3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.",

author = "Park, \{R. M.\} and Troffer, \{M. B.\} and Rouleau, \{C. M.\} and DePuydt, \{J. M.\} and Haase, \{M. A.\}",

year = "1990",

doi = "10.1063/1.103919",

language = "English",

volume = "57",

pages = "2127--2129",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

AU - Park, R. M.

AU - Troffer, M. B.

AU - Rouleau, C. M.

AU - DePuydt, J. M.

AU - Haase, M. A.

PY - 1990

Y1 - 1990

N2 - A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm -3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.

AB - A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm -3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.

UR - https://www.scopus.com/pages/publications/21544440282

U2 - 10.1063/1.103919

DO - 10.1063/1.103919

M3 - Article

AN - SCOPUS:21544440282

SN - 0003-6951

VL - 57

SP - 2127

EP - 2129

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

Abstract

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