Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films

Weiwei Li; Junxing Gu; Qian He; Kelvin H.L. Zhang; Chunchang Wang; Kuijuan Jin; Yongqiang Wang; Matias Acosta; Haiyan Wang; Albina Y. Borisevich; Judith L. Macmanus-Driscoll; Hao Yang

doi:10.1063/1.5025607

Oxygen-vacancy-mediated dielectric property in perovskite Eu_0.5Ba_0.5TiO_3-δ epitaxial thin films

Weiwei Li, Junxing Gu, Qian He, Kelvin H.L. Zhang, Chunchang Wang, Kuijuan Jin, Yongqiang Wang, Matias Acosta, Haiyan Wang, Albina Y. Borisevich, Judith L. Macmanus-Driscoll, Hao Yang

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Dielectric relaxation in ABO₃ perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (V_O) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the V_O concentration on the dielectric relaxation of Eu_0.5Ba_0.5TiO_3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu_0.5Ba_0.5TiO_3-δ films. We found that dipolar defects created by V_O interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu_0.5Ba_0.5TiO_3-δ films. Activation energy gradually increases with the increasing content of V_O. The present work significantly extends our understanding of relaxation properties in oxide films.

Original language	English
Article number	182906
Journal	Applied Physics Letters
Volume	112
Issue number	18
DOIs	https://doi.org/10.1063/1.5025607
State	Published - Apr 30 2018

Funding

The authors acknowledge support from the National Natural Science Foundation of China (Grant Nos. U1632122, 11774172, and 11721404) and the Fundamental Research Funds for the Central Universities (Grant Nos. NE2016102 and NP2017103). J.L.M.-D. and W.L. acknowledge support from EPSRC Grant EP/K035282/1, EPSRC Grant EP/ N004272/1, and the Isaac Newton Trust [Minute 13.38(k)]. K.H.L.Z. acknowledges financial support from the Chinese Government 1000-Young Talent Program. The oxygen measurement was supported by the Center for Integrated Nanotechnologies (CINT), a DOE nanoscience user facility jointly operated by Los Alamos and Sandia National Laboratories. The STEM study (QH and AYB) was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The TEM study at Purdue University was funded by the U.S. National Science Foundation DMR-1643911.

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title = "Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films",

abstract = "Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.",

author = "Weiwei Li and Junxing Gu and Qian He and Zhang, {Kelvin H.L.} and Chunchang Wang and Kuijuan Jin and Yongqiang Wang and Matias Acosta and Haiyan Wang and Borisevich, {Albina Y.} and Macmanus-Driscoll, {Judith L.} and Hao Yang",

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AU - Li, Weiwei

AU - Gu, Junxing

AU - He, Qian

AU - Zhang, Kelvin H.L.

AU - Wang, Chunchang

AU - Jin, Kuijuan

AU - Wang, Yongqiang

AU - Acosta, Matias

AU - Wang, Haiyan

AU - Borisevich, Albina Y.

AU - Macmanus-Driscoll, Judith L.

AU - Yang, Hao

PY - 2018/4/30

Y1 - 2018/4/30

N2 - Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.

AB - Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.

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Oxygen-vacancy-mediated dielectric property in perovskite Eu_0.5Ba_0.5TiO_3-δ epitaxial thin films

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