Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch

Er Jia Guo; Yaohua Liu; Changhee Sohn; Ryan D. Desautels; Andreas Herklotz; Zhaoliang Liao; John Nichols; John W. Freeland; Michael R. Fitzsimmons; Ho Nyung Lee

doi:10.1002/adma.201705904

Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch

Er Jia Guo, Yaohua Liu, Changhee Sohn, Ryan D. Desautels, Andreas Herklotz, Zhaoliang Liao, John Nichols, John W. Freeland, Michael R. Fitzsimmons, Ho Nyung Lee

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (V_O) formed in LaNiO₃ (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the V_O concentration in LNO significantly modifies the degree of orbital polarization and drives the metal–insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called “oxygen diode”, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.

Original language	English
Article number	1705904
Journal	Advanced Materials
Volume	30
Issue number	15
DOIs	https://doi.org/10.1002/adma.201705904
State	Published - Apr 12 2018

Funding

The authors thank S. Ismail-Beigi, P. Ganesh, and V. R. Cooper for valuable discussions. This work was supported by the U.S. Department of Energy (DOE), Office of Science (OS), Basic Energy Sciences (BES), Materials Sciences and Engineering Division. Use of the Advanced Photon Source, an OS User Facility operated for the U.S. DOE by Argonne National Laboratory, was supported by the U.S. DOE. Optical conductivity measurements were performed as a user proposal at the Center for Nanophase Materials Sciences, which is sponsored at ORNL by the Scientific User Facilities Division, BES, U.S. DOE.

Funders	Funder number
U.S. DOE
U.S. Department of Energy
Office of Science
Basic Energy Sciences	BES
Argonne National Laboratory

Keywords

ionic rectification
nickelates
orbital polarization
oxygen diode
oxygen vacancies

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10.1002/adma.201705904

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title = "Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch",

abstract = "Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (VO) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the VO concentration in LNO significantly modifies the degree of orbital polarization and drives the metal–insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called “oxygen diode”, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.",

keywords = "ionic rectification, nickelates, orbital polarization, oxygen diode, oxygen vacancies",

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AU - Guo, Er Jia

AU - Liu, Yaohua

AU - Sohn, Changhee

AU - Desautels, Ryan D.

AU - Herklotz, Andreas

AU - Liao, Zhaoliang

AU - Nichols, John

AU - Freeland, John W.

AU - Fitzsimmons, Michael R.

AU - Lee, Ho Nyung

PY - 2018/4/12

Y1 - 2018/4/12

N2 - Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (VO) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the VO concentration in LNO significantly modifies the degree of orbital polarization and drives the metal–insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called “oxygen diode”, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.

AB - Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (VO) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the VO concentration in LNO significantly modifies the degree of orbital polarization and drives the metal–insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called “oxygen diode”, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.

KW - ionic rectification

KW - nickelates

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Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch

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