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Overview of 1.2kV - 2.2kV SiC MOSFETs targeted for industrial power conversion applications
Alexander Bolotnikov, Peter Losee, Alfred Permuy, Greg Dunne, Stacey Kennerly, Brian Rowden, Jeffrey Nasadoski, Maja Harfman-Todorovic, Ravisekhar Raju, Fengfeng Tao, Philip Cioffi, Frank J. Mueller, Ljubisa Stevanovic
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review