TY - GEN
T1 - Overview of 1.2kV - 2.2kV SiC MOSFETs targeted for industrial power conversion applications
AU - Bolotnikov, Alexander
AU - Losee, Peter
AU - Permuy, Alfred
AU - Dunne, Greg
AU - Kennerly, Stacey
AU - Rowden, Brian
AU - Nasadoski, Jeffrey
AU - Harfman-Todorovic, Maja
AU - Raju, Ravisekhar
AU - Tao, Fengfeng
AU - Cioffi, Philip
AU - Mueller, Frank J.
AU - Stevanovic, Ljubisa
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/5/8
Y1 - 2015/5/8
N2 - This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for high-power, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm × 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25°C and 11mOhm at 150°C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE's SiC MOSFET performance advantages was done through continuous buck-boost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.
AB - This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for high-power, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm × 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25°C and 11mOhm at 150°C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE's SiC MOSFET performance advantages was done through continuous buck-boost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.
KW - MOSFET
KW - SiC
KW - body diode
KW - medium voltage power converter
KW - module
KW - power device
KW - radiation hardness
KW - series connected
UR - http://www.scopus.com/inward/record.url?scp=84937945192&partnerID=8YFLogxK
U2 - 10.1109/APEC.2015.7104691
DO - 10.1109/APEC.2015.7104691
M3 - Conference contribution
AN - SCOPUS:84937945192
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2445
EP - 2452
BT - APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
Y2 - 15 March 2015 through 19 March 2015
ER -