Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2 Te3 film

W. Li; M. Claassen; Cui Zu Chang; B. Moritz; T. Jia; C. Zhang; S. Rebec; J. J. Lee; M. Hashimoto; D. H. Lu; R. G. Moore; J. S. Moodera; T. P. Devereaux; Z. X. Shen

doi:10.1038/srep32732

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)₂ Te₃ film

W. Li, M. Claassen, Cui Zu Chang, B. Moritz, T. Jia, C. Zhang, S. Rebec, J. J. Lee, M. Hashimoto, D. H. Lu, R. G. Moore, J. S. Moodera, T. P. Devereaux, Z. X. Shen

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Abstract

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)₂ Te₃ films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)₂ Te₃ thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

Original language	English
Article number	32732
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep32732
State	Published - Sep 7 2016
Externally published	Yes

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Li, W., Claassen, M., Chang, C. Z., Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D. H., Moore, R. G., Moodera, J. S., Devereaux, T. P., & Shen, Z. X. (2016). Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)₂ Te₃ film. Scientific Reports, 6, Article 32732. https://doi.org/10.1038/srep32732

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title = "Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2 Te3 film",

abstract = "The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2 Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2 Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.",

author = "W. Li and M. Claassen and Chang, {Cui Zu} and B. Moritz and T. Jia and C. Zhang and S. Rebec and Lee, {J. J.} and M. Hashimoto and Lu, {D. H.} and Moore, {R. G.} and Moodera, {J. S.} and Devereaux, {T. P.} and Shen, {Z. X.}",

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doi = "10.1038/srep32732",

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AU - Li, W.

AU - Claassen, M.

AU - Chang, Cui Zu

AU - Moritz, B.

AU - Jia, T.

AU - Zhang, C.

AU - Rebec, S.

AU - Lee, J. J.

AU - Hashimoto, M.

AU - Lu, D. H.

AU - Moore, R. G.

AU - Moodera, J. S.

AU - Devereaux, T. P.

AU - Shen, Z. X.

PY - 2016/9/7

Y1 - 2016/9/7

N2 - The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2 Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2 Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

AB - The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2 Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2 Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

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Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)₂ Te₃ film

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