Origin of atomic clusters during ion sputtering

L. E. Rehn; R. C. Birtcher; S. E. Donnelly; P. M. Baldo; L. Funk

Origin of atomic clusters during ion sputtering

L. E. Rehn, R. C. Birtcher, S. E. Donnelly, P. M. Baldo, L. Funk

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Abstract

Transmission electron microscopy (TEM) studies of the size distributions of the larger clusters (n ≥ 500) that are sputtered from the surface by high-energy ion impacts were carried out. An inverse power-law size distribution with an exponent of -2 that is independent of the total sputtering yield was obtained.

Original language	English
Article number	207601
Pages (from-to)	207601/1-207601/4
Journal	Physical Review Letters
Volume	87
Issue number	20
State	Published - Nov 12 2001

Cite this

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title = "Origin of atomic clusters during ion sputtering",

abstract = "Transmission electron microscopy (TEM) studies of the size distributions of the larger clusters (n ≥ 500) that are sputtered from the surface by high-energy ion impacts were carried out. An inverse power-law size distribution with an exponent of -2 that is independent of the total sputtering yield was obtained.",

author = "Rehn, {L. E.} and Birtcher, {R. C.} and Donnelly, {S. E.} and Baldo, {P. M.} and L. Funk",

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AU - Rehn, L. E.

AU - Birtcher, R. C.

AU - Donnelly, S. E.

AU - Baldo, P. M.

AU - Funk, L.

PY - 2001/11/12

Y1 - 2001/11/12

N2 - Transmission electron microscopy (TEM) studies of the size distributions of the larger clusters (n ≥ 500) that are sputtered from the surface by high-energy ion impacts were carried out. An inverse power-law size distribution with an exponent of -2 that is independent of the total sputtering yield was obtained.

AB - Transmission electron microscopy (TEM) studies of the size distributions of the larger clusters (n ≥ 500) that are sputtered from the surface by high-energy ion impacts were carried out. An inverse power-law size distribution with an exponent of -2 that is independent of the total sputtering yield was obtained.

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Origin of atomic clusters during ion sputtering

Abstract

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