TY - JOUR
T1 - Optimized design of cavity facet coatings of 808 nm high power semiconductor laser
AU - Tao, Ge Tao
AU - Lu, Guo Guang
AU - Yao, Shun
AU - Ning, Yong Qiang
AU - Liu, Yun
AU - Wang, Li Jun
PY - 2007/12
Y1 - 2007/12
N2 - The incident power ratio of front and back cavity facet coatings was deduced, and the importance in optimized designing of electric field intensity (EFI) distribution of back cavity facet coatings for 808 nm high power semiconductor laser was explained. Based on the experimental fabrication of cavity facet coatings, optimized coatings of back cavity facet are given through choosing proper starting materials. Several methods of solving key problems in the fabrication of cavity facet coating are discussed, and several designing methods of front cavity surface coating are provided, thus back cavity facet coatings of which electric field intensity being optimizedly designed are obtained.
AB - The incident power ratio of front and back cavity facet coatings was deduced, and the importance in optimized designing of electric field intensity (EFI) distribution of back cavity facet coatings for 808 nm high power semiconductor laser was explained. Based on the experimental fabrication of cavity facet coatings, optimized coatings of back cavity facet are given through choosing proper starting materials. Several methods of solving key problems in the fabrication of cavity facet coating are discussed, and several designing methods of front cavity surface coating are provided, thus back cavity facet coatings of which electric field intensity being optimizedly designed are obtained.
KW - Cavity facet coatings
KW - High power semiconductor laser
KW - Optimized electric field intensity designing
UR - https://www.scopus.com/pages/publications/39149143322
M3 - Article
AN - SCOPUS:39149143322
SN - 1001-5868
VL - 28
SP - 778-780+784
JO - Bandaoti Guangdian/Semiconductor Optoelectronics
JF - Bandaoti Guangdian/Semiconductor Optoelectronics
IS - 6
ER -