Optimization on photoelectric detection based on stacked La 0.9Sr0.1MnO3-δ/LaAlO3-δ multijunctions

Jie Xing; Hui Ying Hao; Er Jia Guo; Fang Yang

doi:10.1063/1.3621143

Optimization on photoelectric detection based on stacked La _0.9Sr_0.1MnO_3-δ/LaAlO_3-δ multijunctions

Jie Xing, Hui Ying Hao, Er Jia Guo, Fang Yang

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Three multijunctions consisting of La_0.9Sr_0.1MnO _3-δ and LaAlO_3-δ on Si substrate have been fabricated under different oxygen pressures by laser molecular beam epitaxy. They exhibit nonlinear and rectifying current-voltage characteristics and evident photocurrent response to He-Ne laser illumination. Experimental results indicate that the periodically stacked multijunction grown under lower oxygen pressure shows a better rectification behavior and a higher photocurrent. The photovoltaic responsivities of the multijunctions are enhanced greatly at reverse bias and are much higher than that of a similarly grown single p-n junction. Based on the band structure of the multilayers, a possible mechanism of the photovoltaic process was proposed. A high photovoltage responsivity of 168.6 mV/mW has been achieved at - 6 V bias; this demonstrates the potential of the present multijunction configuration for photodetectors operating at room temperature.

Original language	English
Article number	033103
Journal	Journal of Applied Physics
Volume	110
Issue number	3
DOIs	https://doi.org/10.1063/1.3621143
State	Published - Aug 1 2011
Externally published	Yes

Funding

This work is supported by the National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities (Grant Nos. 2010ZY50 and 2011YYL006), Open Research Fund Program of National Laboratory of Mineral Materials of China University of Geosciences and Open Research Fund Program of Key Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences.

Funders	Funder number
National Laboratory of Mineral Materials of China University of Geosciences and Open Research Fund Program of Key Laboratory of Optical Physics
Institute of Physics
National Natural Science Foundation of China
Chinese Academy of Sciences
Fundamental Research Funds for the Central Universities	2010ZY50, 2011YYL006

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.3621143

Cite this

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title = "Optimization on photoelectric detection based on stacked La 0.9Sr0.1MnO3-δ/LaAlO3-δ multijunctions",

abstract = "Three multijunctions consisting of La0.9Sr0.1MnO 3-δ and LaAlO3-δ on Si substrate have been fabricated under different oxygen pressures by laser molecular beam epitaxy. They exhibit nonlinear and rectifying current-voltage characteristics and evident photocurrent response to He-Ne laser illumination. Experimental results indicate that the periodically stacked multijunction grown under lower oxygen pressure shows a better rectification behavior and a higher photocurrent. The photovoltaic responsivities of the multijunctions are enhanced greatly at reverse bias and are much higher than that of a similarly grown single p-n junction. Based on the band structure of the multilayers, a possible mechanism of the photovoltaic process was proposed. A high photovoltage responsivity of 168.6 mV/mW has been achieved at - 6 V bias; this demonstrates the potential of the present multijunction configuration for photodetectors operating at room temperature.",

author = "Jie Xing and {Ying Hao}, Hui and {Jia Guo}, Er and Fang Yang",

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AU - Xing, Jie

AU - Ying Hao, Hui

AU - Jia Guo, Er

AU - Yang, Fang

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AB - Three multijunctions consisting of La0.9Sr0.1MnO 3-δ and LaAlO3-δ on Si substrate have been fabricated under different oxygen pressures by laser molecular beam epitaxy. They exhibit nonlinear and rectifying current-voltage characteristics and evident photocurrent response to He-Ne laser illumination. Experimental results indicate that the periodically stacked multijunction grown under lower oxygen pressure shows a better rectification behavior and a higher photocurrent. The photovoltaic responsivities of the multijunctions are enhanced greatly at reverse bias and are much higher than that of a similarly grown single p-n junction. Based on the band structure of the multilayers, a possible mechanism of the photovoltaic process was proposed. A high photovoltage responsivity of 168.6 mV/mW has been achieved at - 6 V bias; this demonstrates the potential of the present multijunction configuration for photodetectors operating at room temperature.

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