Optimization of the QWITT diode using equivalent circuit models

M. J. Paulus; D. W. Whitson; C. E. Stutz; K. R. Evans; E. T. Koenig; R. Neidhard

Optimization of the QWITT diode using equivalent circuit models

M. J. Paulus, D. W. Whitson, C. E. Stutz, K. R. Evans, E. T. Koenig, R. Neidhard

Research output: Contribution to journal › Conference article › peer-review

Abstract

An investigation is conducted of an equivalent circuit and an equivalent circuit-distributed impedance model for the QWITT (quantum-well injection transient time) diode. Both models incorporate a negative inductor to model the finite lifetime of carriers in the quantum well. For the latter model, the cutoff frequency and the negative resistance can be optimized with respect to the drift region length, W. It is predicted and experimentally confirmed at low values of W that the cutoff frequency increases with W. The two models diverge as W increases and the drift angle is found to be a good predictor for this behavior.

Original language	English
Pages (from-to)	769-772
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
State	Published - 1990
Externally published	Yes
Event	1990 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3) - Dallas, TX, USA Duration: May 8 1990 → May 10 1990

Cite this

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title = "Optimization of the QWITT diode using equivalent circuit models",

abstract = "An investigation is conducted of an equivalent circuit and an equivalent circuit-distributed impedance model for the QWITT (quantum-well injection transient time) diode. Both models incorporate a negative inductor to model the finite lifetime of carriers in the quantum well. For the latter model, the cutoff frequency and the negative resistance can be optimized with respect to the drift region length, W. It is predicted and experimentally confirmed at low values of W that the cutoff frequency increases with W. The two models diverge as W increases and the drift angle is found to be a good predictor for this behavior.",

author = "Paulus, {M. J.} and Whitson, {D. W.} and Stutz, {C. E.} and Evans, {K. R.} and Koenig, {E. T.} and R. Neidhard",

year = "1990",

language = "English",

volume = "2",

pages = "769--772",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

note = "1990 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3) ; Conference date: 08-05-1990 Through 10-05-1990",

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TY - JOUR

T1 - Optimization of the QWITT diode using equivalent circuit models

AU - Paulus, M. J.

AU - Whitson, D. W.

AU - Stutz, C. E.

AU - Evans, K. R.

AU - Koenig, E. T.

AU - Neidhard, R.

PY - 1990

Y1 - 1990

N2 - An investigation is conducted of an equivalent circuit and an equivalent circuit-distributed impedance model for the QWITT (quantum-well injection transient time) diode. Both models incorporate a negative inductor to model the finite lifetime of carriers in the quantum well. For the latter model, the cutoff frequency and the negative resistance can be optimized with respect to the drift region length, W. It is predicted and experimentally confirmed at low values of W that the cutoff frequency increases with W. The two models diverge as W increases and the drift angle is found to be a good predictor for this behavior.

AB - An investigation is conducted of an equivalent circuit and an equivalent circuit-distributed impedance model for the QWITT (quantum-well injection transient time) diode. Both models incorporate a negative inductor to model the finite lifetime of carriers in the quantum well. For the latter model, the cutoff frequency and the negative resistance can be optimized with respect to the drift region length, W. It is predicted and experimentally confirmed at low values of W that the cutoff frequency increases with W. The two models diverge as W increases and the drift angle is found to be a good predictor for this behavior.

UR - http://www.scopus.com/inward/record.url?scp=0025065746&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0025065746

SN - 0149-645X

VL - 2

SP - 769

EP - 772

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 1990 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3)

Y2 - 8 May 1990 through 10 May 1990

ER -

Optimization of the QWITT diode using equivalent circuit models

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