Optimization of front-end design in imaging and spectrometry applications with room temperature semiconductor detectors

Lorenzo Fabris; Pierfrancesco Manfredi

doi:10.1109/TNS.2002.801703

Optimization of front-end design in imaging and spectrometry applications with room temperature semiconductor detectors

Lorenzo Fabris, Pierfrancesco Manfredi

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This paper addresses the optimization of front-end design in position sensing, imaging, and high-resolution energy dispersive analysis with room temperature semiconductor detectors. The focus is on monolithic solutions able to meet the requirements of high functional densities set by multielectrode, finely segmented detectors. Front-end architectures featuring additional functions besides charge measurements, as demanded by the need of acquiring and processing multiparametric information associated with the detector signals will be discussed. Noise will be an issue of dominant importance in all the following analysis. The advent of CMOS processes featuring submicron gate length and gate oxide thicknesses in the few nanometers region is overturning some of the classical criteria in the choice of the front-end device. The achievement of the limits in resolution requires a strict control of the noise contribution from the current amplifier which ordinarily follows the front-end element in the charge-sensitive loop. This aspect becomes more crucial in designing front-end systems with submicron processes.

Original language	English
Pages (from-to)	1978-1985
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	49 I
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2002.801703
State	Published - Aug 2002
Externally published	Yes

Funding

Manuscript received November 24, 2001; revised May 16, 2002. This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract DE-AC03-76SF00098. L. Fabris is with the E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720 USA (e-mail: [email protected]). P. Manfredi is with the E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720 USA, and also with the Università di Pavia and INFN Pavia, 27100 Pavia, Italy (e-mail: [email protected]). Digital Object Identifier 10.1109/TNS.2002.801703

Funders	Funder number
U.S. Department of Energy	DE-AC03-76SF00098
Office of Science
Basic Energy Sciences

Keywords

Capacitive matching
Monolithic processes
Noise optimization

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10.1109/TNS.2002.801703

Cite this

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Optimization of front-end design in imaging and spectrometry applications with room temperature semiconductor detectors

Abstract

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Keywords

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