Abstract
Tb2PdSi3 single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. Congruent melting behavior of this compound was proved at a liquidus temperature of about 1700°C which was corresponding to the DTA value. Platelet-like precipitates of TbSi phase was not found in the crystal matrix which was unavoidable in other R2PdSi3 compound single crystal growth. It may be caused by the slightly Tb-enrichment in the crystal matrix. AlB2 type crystal structure and high crystal perfection were proved by X-ray Laue back scattering images. The χ(T) curves of both a and c axis were measured.
| Original language | English |
|---|---|
| Pages (from-to) | 13-17 |
| Number of pages | 5 |
| Journal | Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment |
| Volume | 35 |
| Issue number | 4 |
| State | Published - Apr 2014 |
| Externally published | Yes |
Keywords
- Floating zone technique
- Magnetic property
- Rare earth compounds
- Single crystal growth