Optical changes induced in GaAs/AlGaAs waveguides by MeV ion bombardment

T. Taylor; D. Ila; R. L. Zimmerman; P. R. Ashley; D. B. Poker; D. K. Hensley

doi:10.1016/S0168-583X(96)00970-6

Optical changes induced in GaAs/AlGaAs waveguides by MeV ion bombardment

T. Taylor, D. Ila, R. L. Zimmerman, P. R. Ashley, D. B. Poker, D. K. Hensley

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated optical channel waveguides in selectively masked planar GaAs/AlGaAs waveguide structures using MeV carbon and oxygen ions without post annealing. The fabricated channel waveguides were characterized exclusively by performing optical transmission measurements at a wavelength of 1.3 μm. Investigation of the extracted optical results reveals that further optimization of the ion beam parameters is required to reduce the observed propagation loss values. The feasibility of this technique may provide a totally new concept of localized optical modifications in the GaAs/AlGaAs system.

Original language	English
Pages (from-to)	442-445
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	127-128
DOIs	https://doi.org/10.1016/S0168-583X(96)00970-6
State	Published - May 1997

Funding

cim.aamu.edu. ’ The submitted manuscript has been authored by a contractor of the U.S. Government under contract No. DE-AC05-960R22464. Accordingly, the U.S. Government retains a nonexclusive, royalty-free license to publish or reproduce the published form of the contribution, or allow others to do so for U.S. Government purposes. ’ Supported by NSF-MRCE. The authorsw ould like to especiallyt hankE ric Webster for accomplishingth e maskingp rocedurea t the MI-COM LaboratoryT. his projectis supportebdy NSF-MRCE under grant numberR II880291,and by the Division of MaterialsS cienceU, .S. Departmenotf Energy,u nderc on-tractD E-AC05960R22464w ith LockheedM artin Energy ResearchC orporationa nd theH owardJ . FosterC enterf or Irradiationo f Materialsa t AlabamaA &M University.

Funders	Funder number
U.S. Government	DE-AC05-960R22464
Division of MaterialsS cienceU
NSF-MRCE	II880291

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@article{32ba8cef9c424cc5ab3d1c23ef5d4aba,

title = "Optical changes induced in GaAs/AlGaAs waveguides by MeV ion bombardment",

abstract = "We have fabricated optical channel waveguides in selectively masked planar GaAs/AlGaAs waveguide structures using MeV carbon and oxygen ions without post annealing. The fabricated channel waveguides were characterized exclusively by performing optical transmission measurements at a wavelength of 1.3 μm. Investigation of the extracted optical results reveals that further optimization of the ion beam parameters is required to reduce the observed propagation loss values. The feasibility of this technique may provide a totally new concept of localized optical modifications in the GaAs/AlGaAs system.",

author = "T. Taylor and D. Ila and Zimmerman, {R. L.} and Ashley, {P. R.} and Poker, {D. B.} and Hensley, {D. K.}",

year = "1997",

month = may,

doi = "10.1016/S0168-583X(96)00970-6",

language = "English",

volume = "127-128",

pages = "442--445",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Optical changes induced in GaAs/AlGaAs waveguides by MeV ion bombardment

AU - Taylor, T.

AU - Ila, D.

AU - Zimmerman, R. L.

AU - Ashley, P. R.

AU - Poker, D. B.

AU - Hensley, D. K.

PY - 1997/5

Y1 - 1997/5

N2 - We have fabricated optical channel waveguides in selectively masked planar GaAs/AlGaAs waveguide structures using MeV carbon and oxygen ions without post annealing. The fabricated channel waveguides were characterized exclusively by performing optical transmission measurements at a wavelength of 1.3 μm. Investigation of the extracted optical results reveals that further optimization of the ion beam parameters is required to reduce the observed propagation loss values. The feasibility of this technique may provide a totally new concept of localized optical modifications in the GaAs/AlGaAs system.

AB - We have fabricated optical channel waveguides in selectively masked planar GaAs/AlGaAs waveguide structures using MeV carbon and oxygen ions without post annealing. The fabricated channel waveguides were characterized exclusively by performing optical transmission measurements at a wavelength of 1.3 μm. Investigation of the extracted optical results reveals that further optimization of the ion beam parameters is required to reduce the observed propagation loss values. The feasibility of this technique may provide a totally new concept of localized optical modifications in the GaAs/AlGaAs system.

UR - http://www.scopus.com/inward/record.url?scp=0031547928&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(96)00970-6

DO - 10.1016/S0168-583X(96)00970-6

M3 - Article

AN - SCOPUS:0031547928

SN - 0168-583X

VL - 127-128

SP - 442

EP - 445

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Optical changes induced in GaAs/AlGaAs waveguides by MeV ion bombardment

Abstract

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