Optical absorption and photosensitivity of N implanted silica

R. H. Magruder, R. A. Weeks, R. A. Zuhr, D. K. Hensley

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4 Scopus citations

Abstract

Silica was implanted with N ions at 4 MeV with nominal doses of 0.1, 0.3, 1.0 and 3.0 × 1016 ions/cm2. Optical absorption, measured from 2.5 to 6.2 eV, had maxima at 5.0 and 5.9 eV whose amplitudes increased with increasing dose. The ratio of the maximum amplitudes of these two bands was invariant with dose. The sample implanted with 1 × 1016 ions/cm2 was exposed to 5 eV KrF excimer photons, 150 mJ/cm2 per 20 ns pulse for totals of 1.5, 15 and 30 J/cm2. Absorption decreased at 5.0, 5.9 and 6.2 eV for all exposures. The decrease in absorption revealed a band at ∼ 4.7 eV that did not bleach. Thes data are compared to similar data of B implanted silica and based on comparison effects specific to N and B are resolved. These differences are attributed to interactions of N with Si and B with O.

Original languageEnglish
Pages (from-to)575-579
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume141
Issue number1-4
DOIs
StatePublished - May 1998

Keywords

  • Ion implantation
  • Optical absorption
  • Silica

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