Optical absorption and photosensitivity of N implanted silica

R. H. Magruder; R. A. Weeks; R. A. Zuhr; D. K. Hensley

doi:10.1016/s0168-583x(98)00100-1

Optical absorption and photosensitivity of N implanted silica

R. H. Magruder, R. A. Weeks, R. A. Zuhr, D. K. Hensley

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Silica was implanted with N ions at 4 MeV with nominal doses of 0.1, 0.3, 1.0 and 3.0 × 10¹⁶ ions/cm². Optical absorption, measured from 2.5 to 6.2 eV, had maxima at 5.0 and 5.9 eV whose amplitudes increased with increasing dose. The ratio of the maximum amplitudes of these two bands was invariant with dose. The sample implanted with 1 × 10¹⁶ ions/cm² was exposed to 5 eV KrF excimer photons, 150 mJ/cm² per 20 ns pulse for totals of 1.5, 15 and 30 J/cm². Absorption decreased at 5.0, 5.9 and 6.2 eV for all exposures. The decrease in absorption revealed a band at ∼ 4.7 eV that did not bleach. Thes data are compared to similar data of B implanted silica and based on comparison effects specific to N and B are resolved. These differences are attributed to interactions of N with Si and B with O.

Original language	English
Pages (from-to)	575-579
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	141
Issue number	1-4
DOIs	https://doi.org/10.1016/s0168-583x(98)00100-1
State	Published - May 1998

Funding

The authors acknowledge the support of The Research Corporation and Oak Ridge National Laboratory, managed by Lockheed Martin Energy Research Corp. for the US Department of Energy under contract number DE-AC05-96OR22464.

Funders	Funder number
Lockheed Martin Energy Research Corp.
U.S. Department of Energy	DE-AC05-96OR22464
Oak Ridge National Laboratory

Keywords

Ion implantation
Optical absorption
Silica

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title = "Optical absorption and photosensitivity of N implanted silica",

abstract = "Silica was implanted with N ions at 4 MeV with nominal doses of 0.1, 0.3, 1.0 and 3.0 × 1016 ions/cm2. Optical absorption, measured from 2.5 to 6.2 eV, had maxima at 5.0 and 5.9 eV whose amplitudes increased with increasing dose. The ratio of the maximum amplitudes of these two bands was invariant with dose. The sample implanted with 1 × 1016 ions/cm2 was exposed to 5 eV KrF excimer photons, 150 mJ/cm2 per 20 ns pulse for totals of 1.5, 15 and 30 J/cm2. Absorption decreased at 5.0, 5.9 and 6.2 eV for all exposures. The decrease in absorption revealed a band at ∼ 4.7 eV that did not bleach. Thes data are compared to similar data of B implanted silica and based on comparison effects specific to N and B are resolved. These differences are attributed to interactions of N with Si and B with O.",

keywords = "Ion implantation, Optical absorption, Silica",

author = "Magruder, {R. H.} and Weeks, {R. A.} and Zuhr, {R. A.} and Hensley, {D. K.}",

year = "1998",

month = may,

doi = "10.1016/s0168-583x(98)00100-1",

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T1 - Optical absorption and photosensitivity of N implanted silica

AU - Magruder, R. H.

AU - Weeks, R. A.

AU - Zuhr, R. A.

AU - Hensley, D. K.

PY - 1998/5

Y1 - 1998/5

N2 - Silica was implanted with N ions at 4 MeV with nominal doses of 0.1, 0.3, 1.0 and 3.0 × 1016 ions/cm2. Optical absorption, measured from 2.5 to 6.2 eV, had maxima at 5.0 and 5.9 eV whose amplitudes increased with increasing dose. The ratio of the maximum amplitudes of these two bands was invariant with dose. The sample implanted with 1 × 1016 ions/cm2 was exposed to 5 eV KrF excimer photons, 150 mJ/cm2 per 20 ns pulse for totals of 1.5, 15 and 30 J/cm2. Absorption decreased at 5.0, 5.9 and 6.2 eV for all exposures. The decrease in absorption revealed a band at ∼ 4.7 eV that did not bleach. Thes data are compared to similar data of B implanted silica and based on comparison effects specific to N and B are resolved. These differences are attributed to interactions of N with Si and B with O.

AB - Silica was implanted with N ions at 4 MeV with nominal doses of 0.1, 0.3, 1.0 and 3.0 × 1016 ions/cm2. Optical absorption, measured from 2.5 to 6.2 eV, had maxima at 5.0 and 5.9 eV whose amplitudes increased with increasing dose. The ratio of the maximum amplitudes of these two bands was invariant with dose. The sample implanted with 1 × 1016 ions/cm2 was exposed to 5 eV KrF excimer photons, 150 mJ/cm2 per 20 ns pulse for totals of 1.5, 15 and 30 J/cm2. Absorption decreased at 5.0, 5.9 and 6.2 eV for all exposures. The decrease in absorption revealed a band at ∼ 4.7 eV that did not bleach. Thes data are compared to similar data of B implanted silica and based on comparison effects specific to N and B are resolved. These differences are attributed to interactions of N with Si and B with O.

KW - Ion implantation

KW - Optical absorption

KW - Silica

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DO - 10.1016/s0168-583x(98)00100-1

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Optical absorption and photosensitivity of N implanted silica

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