Abstract
The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.
Original language | English |
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Title of host publication | Ion Implantation Technology 2008 - 17th International Conference on Ion Implantation Technology, IIT 2008 |
Editors | Edmund G. Seebauer, Amitabh Jain, Yevgeniy V. Kondratenko, Susan B. Felch |
Publisher | American Institute of Physics Inc. |
Pages | 469-472 |
Number of pages | 4 |
ISBN (Electronic) | 9780735405974 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Event | 17th International Conference on Ion Implantation Technology, IIT 2008 - Monterey, United States Duration: Jun 8 2008 → Jun 13 2008 |
Publication series
Name | AIP Conference Proceedings |
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Volume | 1066 |
ISSN (Print) | 0094-243X |
ISSN (Electronic) | 1551-7616 |
Conference
Conference | 17th International Conference on Ion Implantation Technology, IIT 2008 |
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Country/Territory | United States |
City | Monterey |
Period | 06/8/08 → 06/13/08 |
Funding
Sponsors: US Department of Energy, US Department of Defense, National Science Foundation, National Institutes of Health, Domestic Neutron Detection Office of DHS, Virginia's Center for Innovative Technology.
Keywords
- Boron
- Cathodic arc
- Coatings
- Ion implantation
- Shallow junction doping
- Vacuum arc