Abstract
The temperature and bias voltage dependent electrical transport properties of in situ fabricated Cu-tetracyanoquinodimethane organic nanowire devices are investigated. The low bias conductance and current exhibit a power-law dependence on temperature and bias voltage, respectively. The overall behavior of these nanowires can be well described by a theoretical model of nearly independent parallel chains of quantum dots created by randomly distributed defects.
Original language | English |
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Article number | 193115 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 19 |
DOIs | |
State | Published - 2007 |
Funding
The authors would like to thank Pam Fleming for technical assistance and Michael M. Fogler, Jian-Min Zuo, and Pedro Schlottmann for helpful discussions. Research sponsored by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy under Contract No. DE-AC05-00OR22725 with Oak Ridge National Laboratory, managed and operated by UT-Battelle, LLC. Part of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, U.S. Department of Energy.