On the use of Monte Carlo modeling in the mathematical analysis of scanning electron microscopy-electron beam induced current data

Electron beam induced current (EBIC) is often used to evaluate minority carrier properties in semiconductors. Various mathematical models have been proposed; the most advanced is that of Bonard and Ganìre [J. Appl. Phys. 79, 6987 (1996)]. However, in order to apply this model to EBIC experiments, the lateral and depth distributions of the electron-hole-pair generation in the sample must be known. This letter presents a straightforward method based on Monte Carlo simulation of the electron beam interaction with the sample to evaluate these distribution parameters. A quantitative experimental example from a GaN-based light emitting diode is presented to test the proposed method.