On the features of dislocation-obstacle interaction in thin films: Large-scale atomistic simulation

Y. N. Osetsky; Y. Matsukawa; R. E. Stoller; S. J. Zinkle

doi:10.1080/09500830600908988

On the features of dislocation-obstacle interaction in thin films: Large-scale atomistic simulation

Y. N. Osetsky, Y. Matsukawa, R. E. Stoller, S. J. Zinkle

Microstructural Evolution Modeling

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32 Scopus citations

Abstract

Large-scale atomistic modelling has demonstrated that the dynamic interactions of dislocations in thin films have a number of remarkable features. A particular example is the interaction between a screw dislocation and a stacking fault tetrahedron (SFT) in Cu, which can be directly compared with in situ observations of quenched or irradiated fcc metals. If the specimen is thin, the dislocation velocity is slow, and the temperature is high enough, a segment of the original SFT can be transported towards the surface via a double cross-slip mechanism and fast glide of an edge dislocation segment formed during the interaction. The mechanisms observed in the simulations provide an explanation for the results of in situ straining experiments and the differences between bulk and thin film experiments.

Original language	English
Pages (from-to)	511-519
Number of pages	9
Journal	Philosophical Magazine Letters
Volume	86
Issue number	8
DOIs	https://doi.org/10.1080/09500830600908988
State	Published - Aug 1 2006

Funding

This work was supported by the Division of Materials Sciences and Engineering and the Office of Fusion Energy Sciences, U.S. Department of Energy, under contract DE-AC05-00OR22725 with UT-Battelle, LLC. The authors thank Professor D. J. Bacon and Dr A. V. Barashev for numerous discussions of the results.

Funders	Funder number
U.S. Department of Energy	DE-AC05-00OR22725
Fusion Energy Sciences
Division of Materials Sciences and Engineering

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On the features of dislocation-obstacle interaction in thin films: Large-scale atomistic simulation

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