On the anisotropic migration of point defects in h.c.p. zirconium

A. G. Mikhin, Yu N. Osetsky, V. G. Kapinos

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Abstract

Point-defect calculations in h.c.p. zirconium have been carried out with a pair potential constructed in terms of the generalized pseudopotential theory. Two models of the h.c.p. lattice with either the ideal or the experimental c/a ratio were considered. It has been found with both models that the monovacancy has the same migration energy in and out of the basal plane, whereas the divacancy migration is anisotropic and favours out-of-plane mobility. A significant anisotropy for interstitial migration is observed, with greater in-plane mobility at the experimental c/a ratio. The di-interstitial migrates in the basal plane by the crowdion mechanism. The results of the calculations permit interpretation of some annealing stages of irradiated zirconium and allow conclusions to be drawn on the possibility of the diffusional anisotropy difference in h.c.p. zirconium.

Original languageEnglish
Pages (from-to)25-33
Number of pages9
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume70
Issue number1
DOIs
StatePublished - Jul 1994
Externally publishedYes

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