Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN

L. F. Voss; L. Stafford; R. Khanna; B. P. Gila; C. R. Abernathy; S. J. Pearton; F. Ren; I. I. Kravchenko

doi:10.1063/1.2742572

Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN

L. F. Voss, L. Stafford, R. Khanna, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren, I. I. Kravchenko

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20 Scopus citations

Abstract

Ohmic contacts to p-GaN using a NiAuXTiAu metallization scheme, where X is TaN, TiN, or ZrN, are reported. The dependence of the contact properties on annealing temperature (25-1000 °C) in N2 is examined. For annealing temperatures greater than 500 °C, the contacts display Ohmic characteristics and reach a minimum of about 2× 10^-4Ω cm2 after annealing at 700 °C for 60 s in a N2 ambient. The specific contact resistance is stable on annealing up to at least 1000 °C. However, at high temperatures the morphology of the contacts are very rough and there is a large degree of intermixing between the metallic layers. The thermal stability of these contacts are superior as compared to conventional NiAu, which display poor characteristics at annealing temperatures greater than 500 °C.

Original language	English
Article number	212107
Journal	Applied Physics Letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1063/1.2742572
State	Published - 2007
Externally published	Yes

Funding

The work at UF was partially supported by AFOSR under Grant No. F49620-03-1-0370, by the Army Research Office under Grant No. DAAD19-01-1-0603, and the National Science Foundation (DMR 0400416, L. Hess).

Funders	Funder number
National Science Foundation	DMR 0400416
Air Force Office of Scientific Research	F49620-03-1-0370
Army Research Office	DAAD19-01-1-0603

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title = "Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN",

abstract = "Ohmic contacts to p-GaN using a NiAuXTiAu metallization scheme, where X is TaN, TiN, or ZrN, are reported. The dependence of the contact properties on annealing temperature (25-1000 °C) in N2 is examined. For annealing temperatures greater than 500 °C, the contacts display Ohmic characteristics and reach a minimum of about 2× 10-4Ω cm2 after annealing at 700 °C for 60 s in a N2 ambient. The specific contact resistance is stable on annealing up to at least 1000 °C. However, at high temperatures the morphology of the contacts are very rough and there is a large degree of intermixing between the metallic layers. The thermal stability of these contacts are superior as compared to conventional NiAu, which display poor characteristics at annealing temperatures greater than 500 °C.",

author = "Voss, {L. F.} and L. Stafford and R. Khanna and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and F. Ren and Kravchenko, {I. I.}",

year = "2007",

doi = "10.1063/1.2742572",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN

AU - Voss, L. F.

AU - Stafford, L.

AU - Khanna, R.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I. I.

PY - 2007

Y1 - 2007

N2 - Ohmic contacts to p-GaN using a NiAuXTiAu metallization scheme, where X is TaN, TiN, or ZrN, are reported. The dependence of the contact properties on annealing temperature (25-1000 °C) in N2 is examined. For annealing temperatures greater than 500 °C, the contacts display Ohmic characteristics and reach a minimum of about 2× 10-4Ω cm2 after annealing at 700 °C for 60 s in a N2 ambient. The specific contact resistance is stable on annealing up to at least 1000 °C. However, at high temperatures the morphology of the contacts are very rough and there is a large degree of intermixing between the metallic layers. The thermal stability of these contacts are superior as compared to conventional NiAu, which display poor characteristics at annealing temperatures greater than 500 °C.

AB - Ohmic contacts to p-GaN using a NiAuXTiAu metallization scheme, where X is TaN, TiN, or ZrN, are reported. The dependence of the contact properties on annealing temperature (25-1000 °C) in N2 is examined. For annealing temperatures greater than 500 °C, the contacts display Ohmic characteristics and reach a minimum of about 2× 10-4Ω cm2 after annealing at 700 °C for 60 s in a N2 ambient. The specific contact resistance is stable on annealing up to at least 1000 °C. However, at high temperatures the morphology of the contacts are very rough and there is a large degree of intermixing between the metallic layers. The thermal stability of these contacts are superior as compared to conventional NiAu, which display poor characteristics at annealing temperatures greater than 500 °C.

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DO - 10.1063/1.2742572

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212107

ER -

Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN

Abstract

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