Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Patrick H. Carey; Jiancheng Yang; F. Ren; David C. Hays; S. J. Pearton; Soohwan Jang; Akito Kuramata; Ivan I. Kravchenko

doi:10.1063/1.4996172

Ohmic contacts on n-type β-Ga₂O₃ using AZO/Ti/Au

Patrick H. Carey, Jiancheng Yang, F. Ren, David C. Hays, S. J. Pearton, Soohwan Jang, Akito Kuramata, Ivan I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

AZO interlayers between n-Ga₂O₃ and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga₂O₃ stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10^-5 Ω-cm² were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga₂O₃ is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Original language	English
Article number	095313
Journal	AIP Advances
Volume	7
Issue number	9
DOIs	https://doi.org/10.1063/1.4996172
State	Published - Sep 1 2017

Funding

The project or effort depicted was also sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The research at Dankook was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). Part of the work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

Funders	Funder number
Nano Material Technology Development
U.S. Department of Defense
U.S. Department of Energy
Defense Threat Reduction Agency	HDTRA1-17-1-011
Basic Energy Sciences
Oak Ridge National Laboratory
New Energy and Industrial Technology Development Organization
Ministry of Education	2015R1D1A1A01058663
Ministry of Science, ICT and Future Planning	2015M3A7B7045185
National Research Foundation of Korea

Access to Document

10.1063/1.4996172

Cite this

@article{29b38d0590b0406dbf8ea9da677ba938,

title = "Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au",

abstract = "AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.",

author = "Carey, {Patrick H.} and Jiancheng Yang and F. Ren and Hays, {David C.} and Pearton, {S. J.} and Soohwan Jang and Akito Kuramata and Kravchenko, {Ivan I.}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = sep,

day = "1",

doi = "10.1063/1.4996172",

language = "English",

volume = "7",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

AU - Carey, Patrick H.

AU - Yang, Jiancheng

AU - Ren, F.

AU - Hays, David C.

AU - Pearton, S. J.

AU - Jang, Soohwan

AU - Kuramata, Akito

AU - Kravchenko, Ivan I.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

AB - AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

UR - http://www.scopus.com/inward/record.url?scp=85029487310&partnerID=8YFLogxK

U2 - 10.1063/1.4996172

DO - 10.1063/1.4996172

M3 - Article

AN - SCOPUS:85029487310

SN - 2158-3226

VL - 7

JO - AIP Advances

JF - AIP Advances

IS - 9

M1 - 095313

ER -

Ohmic contacts on n-type β-Ga₂O₃ using AZO/Ti/Au

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this