Off-Centering of Ge Atoms in GeBi2Te4 and Impact on Thermoelectric Performance

Jinfeng Dong, Lei Hu, Jue Liu, Yukun Liu, Yilin Jiang, Zhiling Yu, Xian Yi Tan, Ady Suwardi, Qiang Zheng, Qian Li, Jing Feng Li, Vinayak P. Dravid, Qingyu Yan, Mercouri G. Kanatzidis

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The crystal structure and transport properties of GeBi2Te4 are investigated as a layered compound with potential applications as thermoelectric materials. A disordered arrangement of Ge and Bi atoms in a septuple-layer structure is discovered through synchrotron radiation X-ray diffraction and transmission electron microscopy. Neutron pair distribution function analysis revealed the presence of discordant Ge atoms with an off-centering distance of 0.12 Å at 300 K. The thermal conductivity of GeBi2Te4 is very low due to the strong phonon scattering. This is a result of the three Einstein local oscillators coupled with the disordered arrangement of atoms. This study also explores further the structural characteristics of these materials and their associated phonon scattering processes. The effect of Sb substitution for Ge on the electrical transport properties of the sample is profound, resulting in a change from p-type to n-type conduction. An enhanced thermoelectric figure of merit (ZT) of 0.45 at 523 K in the in-plane direction is obtained. This research provides valuable insights into the crystal structure and transport properties of GeBi2Te4, showcasing its promising role as a thermoelectric material with potential for near-room-temperature applications.

Original languageEnglish
Article number2314499
JournalAdvanced Functional Materials
Volume34
Issue number18
DOIs
StatePublished - May 2 2024

Funding

J.D. and L.H. contributed equally to the work. This study was supported by the MOE ACRF Tier 1 RG128/21, RT6/22, the Basic Science Center Project of NSFC under Grant No. 52388201, the National Key R&D Program of China No. 2023YFB3809400, and NSFC under Grant No. 52073155 and No. 52150092. MGK acknowledges partial support from the U.S. Department of Energy, Office of Science Basic Energy Sciences under grant DE‐SC0024256, DOE Office of Science. This study also used the EPIC facility of Northwestern University's NUANCE Center, which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS 2025633), the MRSEC program (NSF DMR‐1720139) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois. Research performed at the NOMAD beamlines at ORNL's Spallation Neutron Source was sponsored by the Scientific User Facilities Division, Office of Basic Sciences, U.S. Department of Energy. L.H. is supported by the JSPS fellowship for the International Research Fellows (No. P19057) and the synchrotron radiation experiments were performed at the BL02B2 beamline of SPring‐8 with the approval of the Japan Synchrotron Radia‐tion Research Institute (JASRI) (Proposal Nos. 2021A1074). The authors would also like to acknowledge the Facility for Analysis, Characterization, Testing and Simulation, Nanyang Technological University, Singapore, for use of their electron microscopy/X‐ray facilities.

FundersFunder number
Office of Basic Sciences
Office of Science Basic Energy SciencesDE‐SC0024256
Scientific User Facilities Division
Soft and Hybrid Nanotechnology ExperimentalNSF DMR‐1720139, NSF ECCS 2025633
U.S. Department of Energy
W. M. Keck Foundation
Office of Science
Northwestern University
Ministry of Education - SingaporeRT6/22, RG128/21
Japan Society for the Promotion of Science2021A1074, P19057
National Natural Science Foundation of China52388201
National Key Research and Development Program of China2023YFB3809400, 52150092, 52073155

    Keywords

    • low lattice thermal conductivity
    • neutron pair distribution function
    • off-centering
    • thermoelectric

    Fingerprint

    Dive into the research topics of 'Off-Centering of Ge Atoms in GeBi2Te4 and Impact on Thermoelectric Performance'. Together they form a unique fingerprint.

    Cite this