TY - JOUR
T1 - Observations of accelerated silicon carbide recession by oxidation at high water-vapor pressures
AU - More, Karren L.
AU - Tortorelli, Peter F.
AU - Ferber, Mattison K.
AU - Keiser, James R.
PY - 2000
Y1 - 2000
N2 - A study of the exposure of SiC at 1200°C and high water-vapor pressures (1.5 atm) has shown SiC recession rates that exceed what is predicted based on parabolic oxidation at water-vapor pressures of less than or equal to approx. 1 atm. After exposure to these conditions, distinct silica-scale structures are observed; thick, porous, nonprotective cristobalite scales form above a thin, dense silica layer. The porous cristobalite thickens with exposure time, while the thickness of the underlying dense layer remains constant. These observations suggest a moving-boundary phenomenon that is controlled by the rapid conversion of dense vitreous silica to a porous, nonprotective crystalline SiO2.
AB - A study of the exposure of SiC at 1200°C and high water-vapor pressures (1.5 atm) has shown SiC recession rates that exceed what is predicted based on parabolic oxidation at water-vapor pressures of less than or equal to approx. 1 atm. After exposure to these conditions, distinct silica-scale structures are observed; thick, porous, nonprotective cristobalite scales form above a thin, dense silica layer. The porous cristobalite thickens with exposure time, while the thickness of the underlying dense layer remains constant. These observations suggest a moving-boundary phenomenon that is controlled by the rapid conversion of dense vitreous silica to a porous, nonprotective crystalline SiO2.
UR - http://www.scopus.com/inward/record.url?scp=0033741079&partnerID=8YFLogxK
U2 - 10.1111/j.1151-2916.2000.tb01172.x
DO - 10.1111/j.1151-2916.2000.tb01172.x
M3 - Article
AN - SCOPUS:0033741079
SN - 0002-7820
VL - 83
SP - 211
EP - 213
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 1
ER -