Observation of the Fluctuation Spin Hall Effect in a Low-Resistivity Antiferromagnet

Chi Fang, Caihua Wan, Xiaoyue Zhang, Satoshi Okamoto, Tianyi Ma, Jianying Qin, Xiao Wang, Chenyang Guo, Jing Dong, Guoqiang Yu, Zhenchao Wen, Ning Tang, Stuart S.P. Parkin, Naoto Nagaosa, Yuan Lu, Xiufeng Han

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce the power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase transition in chromium (Cr) is proven to be an effective mechanism for creating an additional part of the SHE, named the fluctuation spin Hall effect. The SHA is significantly enhanced when the temperature approaches the Néel temperature (TN) of Cr and has a peak value of −0.36 near TN. This value is higher than the room-temperature value by 153% and leads to a low normalized power consumption among known spin-orbit torque materials. This study demonstrates the critical spin fluctuation as a prospective way to increase the SHA and enriches the AFM material candidates for spin-orbitronic devices.

Original languageEnglish
Pages (from-to)11485-11492
Number of pages8
JournalNano Letters
Volume23
Issue number24
DOIs
StatePublished - Dec 27 2023

Funding

This work was supported by the National Key Research and Development Program of China (MOST) (Grant 2021YFB3601302), the National Natural Science Foundation of China (NSFC) (Grants 51831012, 51620105004, 11974398, and 62225402), the Strategic Priority Research Program (B) of Chinese Academy of Sciences (CAS) (Grant XDB33000000), and the CAS Project for Young Scientists in Basic Research (YSBR-084). C.W. appreciates the financial support from the Youth Innovation Promotion Association, CAS (Grant 2020008). The research by S.O. was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. N.N. was supported by JST CREST Grant JPMJCR1874 and JSPS KAKENHI Grant 18H03676. Y.L. acknowledges the support of the joint French National Research Agency (ANR)-National Natural Science Foundation of China (NSFC) SISTER Project (Grants ANR-11-IS10-0001 and NNSFC 61161130527), the ANR FEOrgSpin project (Grant ANR-18-CE24-0017), the ANR SIZMO2D project (Grant ANR-19-CE24-0005), ANR SOTspinLED project (Grant ANR-22-CE24-0006-01) and the ICEEL SHATIPN projects. The sample growth was performed using equipment from the TUBE-Davm platform funded by FEDER (EU), ANR, the Region Lorraine, and Grand Nancy.

Keywords

  • antiferromagnet
  • chromium
  • low-power devices
  • spin Hall effect
  • spin fluctuation

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