Observation of antiferromagnetic interlayer exchange coupling in a Ga 1-xMnxAs/GaAs:Be/Ga1-xMnx As trilayer structure

J. Leiner; H. Lee; T. Yoo; Sanghoon Lee; B. J. Kirby; K. Tivakornsasithorn; X. Liu; J. K. Furdyna; M. Dobrowolska

doi:10.1103/PhysRevB.82.195205

Observation of antiferromagnetic interlayer exchange coupling in a Ga _1-xMn_xAs/GaAs:Be/Ga_1-xMn_x As trilayer structure

J. Leiner
, H. Lee
, T. Yoo
, Sanghoon Lee
, B. J. Kirby
, K. Tivakornsasithorn
, X. Liu
, J. K. Furdyna
, M. Dobrowolska

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Interlayer exchange coupling (IEC) between two Ga_0.95 Mn _0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

Original language	English
Article number	195205
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.82.195205
State	Published - Nov 16 2010
Externally published	Yes

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Leiner, J., Lee, H., Yoo, T., Lee, S., Kirby, B. J., Tivakornsasithorn, K., Liu, X., Furdyna, J. K., & Dobrowolska, M. (2010). Observation of antiferromagnetic interlayer exchange coupling in a Ga _1-xMn_xAs/GaAs:Be/Ga_1-xMn_x As trilayer structure. Physical Review B - Condensed Matter and Materials Physics, 82(19), Article 195205. https://doi.org/10.1103/PhysRevB.82.195205

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abstract = "Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.",

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doi = "10.1103/PhysRevB.82.195205",

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AU - Leiner, J.

AU - Lee, H.

AU - Yoo, T.

AU - Lee, Sanghoon

AU - Kirby, B. J.

AU - Tivakornsasithorn, K.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Dobrowolska, M.

PY - 2010/11/16

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N2 - Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

AB - Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

UR - https://www.scopus.com/pages/publications/78649755372

U2 - 10.1103/PhysRevB.82.195205

DO - 10.1103/PhysRevB.82.195205

M3 - Article

AN - SCOPUS:78649755372

SN - 1098-0121

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

M1 - 195205

ER -

Observation of antiferromagnetic interlayer exchange coupling in a Ga _1-xMn_xAs/GaAs:Be/Ga_1-xMn_x As trilayer structure

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