Numerical Simulation of Annealing of CdSe Quantum Dots for White Light LEDs

Adrian S. Sabau, Chad Duty, Ronald D. Ott, Gerald E. Jellison

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A computational methodology is proposed to understand the annealing of quantum dots (QD) materials for solid-state lighting applications. An energy transport model has been developed for the pulsed thermal processing (PTP) of CdSe QD using a high-density plasma arc lamp. The model geometry consists of a single layer of CdSe QD spheres deposited on a sapphire substrate and encapsulated in an alumina matrix. The monolayer of QDs was found to alter the total reflectivity, even though the energy absorbed in QD layer was relatively small. The numerical simulations can be an effective tool to predict the narrow range of processing parameters and dramatically reduce expensive trial-and-error experimental procedures while enabling the enhanced properties of nanostmctured materials to be realized.

Original languageEnglish
Title of host publicationMaterials Science and Technology Conference and Exhibition MS and T'08
Pages877-888
Number of pages12
StatePublished - 2008
EventMaterials Science and Technology Conference and Exhibition, MS and T'08 - Pittsburgh, PA, United States
Duration: Oct 5 2008Oct 9 2008

Publication series

NameMaterials Science and Technology Conference and Exhibition, MS and T'08
Volume2

Conference

ConferenceMaterials Science and Technology Conference and Exhibition, MS and T'08
Country/TerritoryUnited States
CityPittsburgh, PA
Period10/5/0810/9/08

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