Nucleation and growth of diamond film on porous silicon substrate

Y. Liao; R. C. Fang; F. Ye; Q. Y. Shao; G. Z. Wang

doi:10.1142/S0217984999000221

Nucleation and growth of diamond film on porous silicon substrate

Y. Liao, R. C. Fang, F. Ye, Q. Y. Shao, G. Z. Wang

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Nucleation and growth of diamond film on porous silicon are investigated in a hot-filament chemical vapor deposition system. The characters of diamond film are determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. A nucleation density of 3.6 × 10⁷ cm^-2 is obtained. We find that almost all nuclei occur at the edge of the etched pores. The diamond film directly deposits on porous silicon substrate without the intermediate and no strains are found in the film.

Original language	English
Pages (from-to)	159-165
Number of pages	7
Journal	Modern Physics Letters B
Volume	13
Issue number	5
DOIs	https://doi.org/10.1142/S0217984999000221
State	Published - Feb 28 1999
Externally published	Yes

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abstract = "Nucleation and growth of diamond film on porous silicon are investigated in a hot-filament chemical vapor deposition system. The characters of diamond film are determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. A nucleation density of 3.6 × 107 cm-2 is obtained. We find that almost all nuclei occur at the edge of the etched pores. The diamond film directly deposits on porous silicon substrate without the intermediate and no strains are found in the film.",

author = "Y. Liao and Fang, {R. C.} and F. Ye and Shao, {Q. Y.} and Wang, {G. Z.}",

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AU - Liao, Y.

AU - Fang, R. C.

AU - Ye, F.

AU - Shao, Q. Y.

AU - Wang, G. Z.

PY - 1999/2/28

Y1 - 1999/2/28

N2 - Nucleation and growth of diamond film on porous silicon are investigated in a hot-filament chemical vapor deposition system. The characters of diamond film are determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. A nucleation density of 3.6 × 107 cm-2 is obtained. We find that almost all nuclei occur at the edge of the etched pores. The diamond film directly deposits on porous silicon substrate without the intermediate and no strains are found in the film.

AB - Nucleation and growth of diamond film on porous silicon are investigated in a hot-filament chemical vapor deposition system. The characters of diamond film are determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. A nucleation density of 3.6 × 107 cm-2 is obtained. We find that almost all nuclei occur at the edge of the etched pores. The diamond film directly deposits on porous silicon substrate without the intermediate and no strains are found in the film.

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Nucleation and growth of diamond film on porous silicon substrate

Abstract

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