@inproceedings{230d8521bf9c4ec6b1d70ce39f0ad807,
title = "Novel tungsten boride based high thermal stability Ohmic contacts to N-gan",
abstract = "A novel Ti/Al/W2B/Ti/Au metallization scheme for Ohmic contact to n-GaN was studied using contact resistance, scanning electron microscopy and Auger Electron Spectroscopy measurements. A minimum contact resistance of 7×10-6 Ω.cm2 was achieved at an annealing temperature of 800 °C. The contact resistance was essentially independent of measurement temperature, indicating that tunneling plays a dominant role in the current transport. The Ti began to outdiffuse to the surface at temperatures of ∼500°C, while at 800°C the Al also began to intermix within the contact. By 1000°C, the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization. The reliability measurements for the contact resistance showed excellent stability for extended periods at 200°C, which simulates the type of device operating temperature that might be expected for operation of GaN-based power electronic devices.",
author = "Rohit Khanna and Pearton, {S. J.} and F. Ren and I. Kravchenko and Kao, {C. J.} and Chi, {G. C.}",
year = "2006",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "103--112",
booktitle = "State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI",
edition = "2",
note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",
}