Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

A. Malasi; H. Taz; A. Farah; M. Patel; B. Lawrie; R. Pooser; A. Baddorf; G. Duscher; R. Kalyanaraman

doi:10.1038/srep18157

Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

A. Malasi, H. Taz, A. Farah, M. Patel, B. Lawrie, R. Pooser, A. Baddorf, G. Duscher, R. Kalyanaraman

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Here we report that ternary metal oxides of type (Me)₂O₃ with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 10⁴S/m) and Hall mobility (>30 cm²/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d-and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

Original language	English
Article number	18157
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep18157
State	Published - Dec 16 2015

Funding

This work was primarily supported by ARO grant W911NF-13-1-0428, and a Science Alliance JDRD grant U013960010. One of the students was partly supported by NSF TNSCORE grant EPS-1004083 while XPS and SEM characterization was conducted through proposals CNMS2013-284 and CNMS2014-327 at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Some of the authors would also like to thank Prof. K. Islam at UT Knoxville for access to critical equipment for transport property measurements. The GIXRD experiments were performed using the instruments that were procured through the general infrastructure grant of DOE-Nuclear Energy University Program (DE-NE0000693). A portion of this manuscript has been authored by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan(http://energy.gov/downloads/doe-public-access-plan). RCP and BL acknowledge support from the Lab oratory Directed Research and Development Program at ORNL.

Funders	Funder number
Center for Nanophase Materials Sciences
Science Alliance JDRD	U013960010
National Science Foundation	EPS-1004083, CNMS2014-327, CNMS2013-284
U.S. Department of Energy
Office of the Director	1004083
Army Research Office	W911NF-13-1-0428
Office of Science	DE-AC05-00OR22725
Oak Ridge National Laboratory
Laboratory Directed Research and Development

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title = "Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility",

abstract = "Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d-and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.",

author = "A. Malasi and H. Taz and A. Farah and M. Patel and B. Lawrie and R. Pooser and A. Baddorf and G. Duscher and R. Kalyanaraman",

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AU - Malasi, A.

AU - Taz, H.

AU - Farah, A.

AU - Patel, M.

AU - Lawrie, B.

AU - Pooser, R.

AU - Baddorf, A.

AU - Duscher, G.

AU - Kalyanaraman, R.

PY - 2015/12/16

Y1 - 2015/12/16

N2 - Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d-and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

AB - Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d-and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

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Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

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