Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy

Chao Zhang; Hoyeon Jeon; Myungchul Oh; Minjun Lee; Sungmin Kim; Sunwouk Yi; Hanho Lee; Inhae Zoh; Yongchan Yoo; Young Kuk

doi:10.1063/1.4990041

Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy

Chao Zhang
, Hoyeon Jeon
, Myungchul Oh
, Minjun Lee
, Sungmin Kim
, Sunwouk Yi
, Hanho Lee
, Inhae Zoh
, Yongchan Yoo
, Young Kuk

Research output: Contribution to journal › Review article › peer-review

4 Scopus citations

Abstract

A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

Original language	English
Article number	066109
Journal	Review of Scientific Instruments
Volume	88
Issue number	6
DOIs	https://doi.org/10.1063/1.4990041
State	Published - Jun 1 2017
Externally published	Yes

Funding

This work is supported in part by the National Research Foundation of Korea (Grant Nos. NRF-2006-0093847 and NRF-2010-00349) and the Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology.

Access to Document

10.1063/1.4990041

Cite this

@article{879cfb53706f472cb131b5568ee09916,

title = "Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy",

abstract = "A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).",

author = "Chao Zhang and Hoyeon Jeon and Myungchul Oh and Minjun Lee and Sungmin Kim and Sunwouk Yi and Hanho Lee and Inhae Zoh and Yongchan Yoo and Young Kuk",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jun,

day = "1",

doi = "10.1063/1.4990041",

language = "English",

volume = "88",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Note

T2 - Development of a wideband amplifier for cryogenic scanning tunneling microscopy

AU - Zhang, Chao

AU - Jeon, Hoyeon

AU - Oh, Myungchul

AU - Lee, Minjun

AU - Kim, Sungmin

AU - Yi, Sunwouk

AU - Lee, Hanho

AU - Zoh, Inhae

AU - Yoo, Yongchan

AU - Kuk, Young

PY - 2017/6/1

Y1 - 2017/6/1

N2 - A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

AB - A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

UR - https://www.scopus.com/pages/publications/85021702375

U2 - 10.1063/1.4990041

DO - 10.1063/1.4990041

M3 - Review article

C2 - 28667959

AN - SCOPUS:85021702375

SN - 0034-6748

VL - 88

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 6

M1 - 066109

ER -

Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this