Normally-on/off AlN/GaN high electron mobility transistors

C. Y. Chang; C. F. Lo; F. Ren; S. J. Pearton; I. I. Kravchenko; A. M. Dabiran; B. Cui; P. P. Chow

doi:10.1002/pssc.200983901

Normally-on/off AlN/GaN high electron mobility transistors

C. Y. Chang, C. F. Lo, F. Ren, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, B. Cui, P. P. Chow

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report on the novel normally-on/off AlN/GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy. With simple oxygen exposure, the threshold voltage can be tuned from -2.76 V to +1.13 V depending on the treatment time. The gate current was reduced and current-voltage curves show metal-oxide semiconductor diode-like characteristics after oxygen plasma exposure. The extrinsic transconductance of HEMTs decrease with increasing oxygen plasma exposure time due to the thicker Al oxide formed on the gate area. The unity current gain cut-off frequency, f_T, and maximum frequency of oscillation, f_max, were 20.4 GHz and 36.5 GHz, respectively for an enhancement-mode HEMT with the gate dimension of 0.4 × 100 μm².

Original language	English
Pages (from-to)	2415-2418
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200983901
State	Published - Oct 2010

Keywords

AlN/GaN
Gate characteristics
MBE
On/off HEMTs
Transconductance

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title = "Normally-on/off AlN/GaN high electron mobility transistors",

abstract = "We report on the novel normally-on/off AlN/GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy. With simple oxygen exposure, the threshold voltage can be tuned from -2.76 V to +1.13 V depending on the treatment time. The gate current was reduced and current-voltage curves show metal-oxide semiconductor diode-like characteristics after oxygen plasma exposure. The extrinsic transconductance of HEMTs decrease with increasing oxygen plasma exposure time due to the thicker Al oxide formed on the gate area. The unity current gain cut-off frequency, fT, and maximum frequency of oscillation, fmax, were 20.4 GHz and 36.5 GHz, respectively for an enhancement-mode HEMT with the gate dimension of 0.4 × 100 μm2.",

keywords = "AlN/GaN, Gate characteristics, MBE, On/off HEMTs, Transconductance",

author = "Chang, {C. Y.} and Lo, {C. F.} and F. Ren and Pearton, {S. J.} and Kravchenko, {I. I.} and Dabiran, {A. M.} and B. Cui and Chow, {P. P.}",

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doi = "10.1002/pssc.200983901",

language = "English",

volume = "7",

pages = "2415--2418",

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TY - JOUR

T1 - Normally-on/off AlN/GaN high electron mobility transistors

AU - Chang, C. Y.

AU - Lo, C. F.

AU - Ren, F.

AU - Pearton, S. J.

AU - Kravchenko, I. I.

AU - Dabiran, A. M.

AU - Cui, B.

AU - Chow, P. P.

PY - 2010/10

Y1 - 2010/10

N2 - We report on the novel normally-on/off AlN/GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy. With simple oxygen exposure, the threshold voltage can be tuned from -2.76 V to +1.13 V depending on the treatment time. The gate current was reduced and current-voltage curves show metal-oxide semiconductor diode-like characteristics after oxygen plasma exposure. The extrinsic transconductance of HEMTs decrease with increasing oxygen plasma exposure time due to the thicker Al oxide formed on the gate area. The unity current gain cut-off frequency, fT, and maximum frequency of oscillation, fmax, were 20.4 GHz and 36.5 GHz, respectively for an enhancement-mode HEMT with the gate dimension of 0.4 × 100 μm2.

AB - We report on the novel normally-on/off AlN/GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy. With simple oxygen exposure, the threshold voltage can be tuned from -2.76 V to +1.13 V depending on the treatment time. The gate current was reduced and current-voltage curves show metal-oxide semiconductor diode-like characteristics after oxygen plasma exposure. The extrinsic transconductance of HEMTs decrease with increasing oxygen plasma exposure time due to the thicker Al oxide formed on the gate area. The unity current gain cut-off frequency, fT, and maximum frequency of oscillation, fmax, were 20.4 GHz and 36.5 GHz, respectively for an enhancement-mode HEMT with the gate dimension of 0.4 × 100 μm2.

KW - AlN/GaN

KW - Gate characteristics

KW - MBE

KW - On/off HEMTs

KW - Transconductance

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U2 - 10.1002/pssc.200983901

DO - 10.1002/pssc.200983901

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 10

ER -

Normally-on/off AlN/GaN high electron mobility transistors

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Keywords

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